Influence of post-deposition annealing on the chemical states of crystalline tantalum pentoxide films
We investigate the effect of post-deposition annealing (for temperatures from 848 K to 1273 K) on the chemical properties of crystalline Ta 2 O 5 films grown on Si(100) substrates by radio frequency magnetron sputtering. The atomic arrangement, as determined by X-ray diffraction, is predominately he...
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Veröffentlicht in: | Applied physics. A, Materials science & processing Materials science & processing, 2018-11, Vol.124 (11), p.1-7, Article 792 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We investigate the effect of post-deposition annealing (for temperatures from 848 K to 1273 K) on the chemical properties of crystalline
Ta
2
O
5
films grown on Si(100) substrates by radio frequency magnetron sputtering. The atomic arrangement, as determined by X-ray diffraction, is predominately hexagonal (
δ
-
Ta
2
O
5
) for the films exposed to heat treatments at 948 K and 1048 K; orthorhombic (
β
-
Ta
2
O
5
) for samples annealed at 1148 K and 1273 K; and amorphous for samples annealed at temperatures below 948 K. X-ray photoelectron spectroscopy for Ta 4
f
and O 1
s
core levels were performed to evaluate the chemical properties of all films as a function of annealing temperature. Upon analysis, it is observed the Ta 4
f
spectrum characteristic of Ta in
Ta
5
+
and the formation of Ta-oxide phases with oxidation states
Ta
1
+
,
Ta
2
+
,
Ta
3
+
, and
Ta
4
+
. The study reveals that the increase in annealing temperature increases the percentage of the state
Ta
5
+
and the reduction of the others indicating that higher temperatures are more desirable to produce
Ta
2
O
5
, however, there seems to be an optimal annealing temperature that maximizes the O% to Ta% ratio. We found that at 1273 K the ratio slightly reduces suggesting oxygen depletion. |
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ISSN: | 0947-8396 1432-0630 |
DOI: | 10.1007/s00339-018-2198-9 |