Moving Beyond p-Type mc-Si: Quantified Measurements of Iron Content and Lifetime of Iron-Rich Precipitates in n-Type Silicon
N-type multicrystalline silicon (mc-Si) is a promising alternative to the dominant p-type mc-Si for solar cells because it combines the cost advantages of mc-Si while benefiting from higher tolerance to transition metal contamination. A detailed understanding of the relative roles of point defect an...
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| Veröffentlicht in: | IEEE journal of photovoltaics 2018-11, Vol.8 (6), p.1525-1530 |
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| creator | Morishige, Ashley E. Heinz, Friedemann D. Laine, Hannu S. Schon, Jonas Kwapil, Wolfram Lai, Barry Savin, Hele Schubert, Martin C. Buonassisi, Tonio |
| description | N-type multicrystalline silicon (mc-Si) is a promising alternative to the dominant p-type mc-Si for solar cells because it combines the cost advantages of mc-Si while benefiting from higher tolerance to transition metal contamination. A detailed understanding of the relative roles of point defect and precipitated transition metals has enabled advanced processing and high minority carrier lifetimes in p-type mc-Si. This contribution extends that fundamental understanding to Fe contamination in n-type mc-Si, helping enable processing of this material into an economical and high-performance photovoltaic device. By directly correlating micro-photoluminescence-based minority carrier lifetime mapping and synchrotron-based micro-X-ray fluorescence mapping of Fe-rich precipitates, we develop a quantitative, physical understanding of the recombination activity of Fe-rich precipitates in n - type mc-Si. |
| doi_str_mv | 10.1109/JPHOTOV.2018.2869544 |
| format | Article |
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(ANL), Argonne, IL (United States)</creatorcontrib><title>Moving Beyond p-Type mc-Si: Quantified Measurements of Iron Content and Lifetime of Iron-Rich Precipitates in n-Type Silicon</title><title>IEEE journal of photovoltaics</title><addtitle>JPHOTOV</addtitle><description>N-type multicrystalline silicon (mc-Si) is a promising alternative to the dominant p-type mc-Si for solar cells because it combines the cost advantages of mc-Si while benefiting from higher tolerance to transition metal contamination. A detailed understanding of the relative roles of point defect and precipitated transition metals has enabled advanced processing and high minority carrier lifetimes in p-type mc-Si. This contribution extends that fundamental understanding to Fe contamination in n-type mc-Si, helping enable processing of this material into an economical and high-performance photovoltaic device. 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This contribution extends that fundamental understanding to Fe contamination in n-type mc-Si, helping enable processing of this material into an economical and high-performance photovoltaic device. 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| subjects | Carrier lifetime Charge carrier lifetime Chemical precipitation Contamination Correlative microscopy Fluorescence Iron Mapping MATERIALS SCIENCE micro-photolumine-scence (μ-PL) micro-photoluminescence micro-X-ray fluorecence micro-X-ray fluorescence (μ-XRF) Minority carriers n-type Photoluminescence Photovoltaic cells Point defects precipitate Precipitates Silicon Solar cells synchrotron Synchrotrons Transition metals X-ray fluorescence |
| title | Moving Beyond p-Type mc-Si: Quantified Measurements of Iron Content and Lifetime of Iron-Rich Precipitates in n-Type Silicon |
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