Effect of argon gas flow rate on properties of film electrodes prepared by thermal vacuum evaporation from synthesized Cu2SnSe3 source

This work describes a new technique to enhance photoresponse of metal chalcogenide-based semiconductor film electrodes deposited by thermal vacuum evaporation under argon gas flow from synthesized Cu2SnSe3 sources. SnSe formation with Cu-doped was obtained under higher argon gas flow rate (VA = 25 c...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Nordin, Sabli, Talib Zainal Abidin, Yunus Wan Mahmood Mat, Zainal Zulkarnain, Hilal, Hikmat S, Fujii Masatoshi
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Argon Carrier density Electrodes Evaporation rate Flow velocity Gas flow Synthesis Vacuum evaporation
Online-Zugang:	Volltext
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