Effect of argon gas flow rate on properties of film electrodes prepared by thermal vacuum evaporation from synthesized Cu2SnSe3 source
This work describes a new technique to enhance photoresponse of metal chalcogenide-based semiconductor film electrodes deposited by thermal vacuum evaporation under argon gas flow from synthesized Cu2SnSe3 sources. SnSe formation with Cu-doped was obtained under higher argon gas flow rate (VA = 25 c...
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| creator | Nordin, Sabli Talib Zainal Abidin Yunus Wan Mahmood Mat Zainal Zulkarnain Hilal, Hikmat S Fujii Masatoshi |
| description | This work describes a new technique to enhance photoresponse of metal chalcogenide-based semiconductor film electrodes deposited by thermal vacuum evaporation under argon gas flow from synthesized Cu2SnSe3 sources. SnSe formation with Cu-doped was obtained under higher argon gas flow rate (VA = 25 cm3/min). Higher value of photoresponse was observed for films deposited under VA = 25 cm3/min which was 9.1%. This finding indicates that Cu atoms inside the SnSe film were important to increase carrier concentrations that promote higher photoresponse. |
| doi_str_mv | 10.1063/1.4866957 |
| format | Conference Proceeding |
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SnSe formation with Cu-doped was obtained under higher argon gas flow rate (VA = 25 cm3/min). Higher value of photoresponse was observed for films deposited under VA = 25 cm3/min which was 9.1%. This finding indicates that Cu atoms inside the SnSe film were important to increase carrier concentrations that promote higher photoresponse.</description><identifier>ISSN: 0094-243X</identifier><identifier>EISSN: 1551-7616</identifier><identifier>DOI: 10.1063/1.4866957</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Argon ; Carrier density ; Electrodes ; Evaporation rate ; Flow velocity ; Gas flow ; Synthesis ; Vacuum evaporation</subject><ispartof>AIP conference proceedings, 2014, Vol.1588 (1), p.264</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,780,784,789,790,23930,23931,25140,27925</link.rule.ids></links><search><creatorcontrib>Nordin, Sabli</creatorcontrib><creatorcontrib>Talib Zainal Abidin</creatorcontrib><creatorcontrib>Yunus Wan Mahmood Mat</creatorcontrib><creatorcontrib>Zainal Zulkarnain</creatorcontrib><creatorcontrib>Hilal, Hikmat S</creatorcontrib><creatorcontrib>Fujii Masatoshi</creatorcontrib><title>Effect of argon gas flow rate on properties of film electrodes prepared by thermal vacuum evaporation from synthesized Cu2SnSe3 source</title><title>AIP conference proceedings</title><description>This work describes a new technique to enhance photoresponse of metal chalcogenide-based semiconductor film electrodes deposited by thermal vacuum evaporation under argon gas flow from synthesized Cu2SnSe3 sources. SnSe formation with Cu-doped was obtained under higher argon gas flow rate (VA = 25 cm3/min). Higher value of photoresponse was observed for films deposited under VA = 25 cm3/min which was 9.1%. This finding indicates that Cu atoms inside the SnSe film were important to increase carrier concentrations that promote higher photoresponse.</description><subject>Argon</subject><subject>Carrier density</subject><subject>Electrodes</subject><subject>Evaporation rate</subject><subject>Flow velocity</subject><subject>Gas flow</subject><subject>Synthesis</subject><subject>Vacuum evaporation</subject><issn>0094-243X</issn><issn>1551-7616</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2014</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNotj81KAzEUhYMoWKsL3yDgempufidLKfUHCi6q4K6kMzd1ynQyJjOV-gA-txFdXTh85ztcQq6BzYBpcQszWWptlTkhE1AKCqNBn5IJY1YWXIq3c3KR0o4xbo0pJ-R74T1WAw2eurgNHd26RH0bPml0A9Ic9DH0GIcG0y_km3ZPsc2VGOoc9RF7F7GmmyMd3jHuXUsPrhrHTB1cH7KlyRIfw56mY5eR1HxlfD7yVbdCQVMYY4WX5My7NuHV_52S1_vFy_yxWD4_PM3vlkXPoRwKFKVlUjAGxooSuXVgUHLFLGyAW_B1jRshDVfohFCSA3eV18i9lrUotZiSmz9v_upjxDSsd3m_y5PrzJrSWAAlfgCnkGLh</recordid><startdate>20140101</startdate><enddate>20140101</enddate><creator>Nordin, Sabli</creator><creator>Talib Zainal Abidin</creator><creator>Yunus Wan Mahmood Mat</creator><creator>Zainal Zulkarnain</creator><creator>Hilal, Hikmat S</creator><creator>Fujii Masatoshi</creator><general>American Institute of Physics</general><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20140101</creationdate><title>Effect of argon gas flow rate on properties of film electrodes prepared by thermal vacuum evaporation from synthesized Cu2SnSe3 source</title><author>Nordin, Sabli ; Talib Zainal Abidin ; Yunus Wan Mahmood Mat ; Zainal Zulkarnain ; Hilal, Hikmat S ; Fujii Masatoshi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p218t-e3890430017938e29a17e425091b1291fddeb34725ea3354212acf6e2f64d3863</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Argon</topic><topic>Carrier density</topic><topic>Electrodes</topic><topic>Evaporation rate</topic><topic>Flow velocity</topic><topic>Gas flow</topic><topic>Synthesis</topic><topic>Vacuum evaporation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nordin, Sabli</creatorcontrib><creatorcontrib>Talib Zainal Abidin</creatorcontrib><creatorcontrib>Yunus Wan Mahmood Mat</creatorcontrib><creatorcontrib>Zainal Zulkarnain</creatorcontrib><creatorcontrib>Hilal, Hikmat S</creatorcontrib><creatorcontrib>Fujii Masatoshi</creatorcontrib><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nordin, Sabli</au><au>Talib Zainal Abidin</au><au>Yunus Wan Mahmood Mat</au><au>Zainal Zulkarnain</au><au>Hilal, Hikmat S</au><au>Fujii Masatoshi</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Effect of argon gas flow rate on properties of film electrodes prepared by thermal vacuum evaporation from synthesized Cu2SnSe3 source</atitle><btitle>AIP conference proceedings</btitle><date>2014-01-01</date><risdate>2014</risdate><volume>1588</volume><issue>1</issue><epage>264</epage><issn>0094-243X</issn><eissn>1551-7616</eissn><abstract>This work describes a new technique to enhance photoresponse of metal chalcogenide-based semiconductor film electrodes deposited by thermal vacuum evaporation under argon gas flow from synthesized Cu2SnSe3 sources. SnSe formation with Cu-doped was obtained under higher argon gas flow rate (VA = 25 cm3/min). Higher value of photoresponse was observed for films deposited under VA = 25 cm3/min which was 9.1%. This finding indicates that Cu atoms inside the SnSe film were important to increase carrier concentrations that promote higher photoresponse.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4866957</doi><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0094-243X |
| ispartof | AIP conference proceedings, 2014, Vol.1588 (1), p.264 |
| issn | 0094-243X 1551-7616 |
| language | eng |
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| source | American Institute of Physics (AIP) Journals |
| subjects | Argon Carrier density Electrodes Evaporation rate Flow velocity Gas flow Synthesis Vacuum evaporation |
| title | Effect of argon gas flow rate on properties of film electrodes prepared by thermal vacuum evaporation from synthesized Cu2SnSe3 source |
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