Defect-mediated ferroelectric domain depinning of polycrystalline BiFeO3 multiferroic thin films

The ferroelectric domain depinning in a polycrystalline BiFeO3 film is studied by a defect-mediated diffusion mechanism driven by a secondary re-oxidation anneal. The presence of defect complexes (oxygen-vacancy-associated dipoles) responsible for pinning is discussed from the current-voltage (I-V)...

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Veröffentlicht in:	Applied physics letters 2014-03, Vol.104 (9)
Hauptverfasser:	Bretos, I., Jiménez, R., Gutiérrez-Lázaro, C., Montero, I., Calzada, M. L.
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Applied physics Bismuth ferrite Current voltage characteristics Defects Ferroelectric domains Ferroelectric materials Ferroelectricity Oxidation Polycrystals Thin films Vacancies
Online-Zugang:	Volltext
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