Defect-mediated ferroelectric domain depinning of polycrystalline BiFeO3 multiferroic thin films
The ferroelectric domain depinning in a polycrystalline BiFeO3 film is studied by a defect-mediated diffusion mechanism driven by a secondary re-oxidation anneal. The presence of defect complexes (oxygen-vacancy-associated dipoles) responsible for pinning is discussed from the current-voltage (I-V)...
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| Veröffentlicht in: | Applied physics letters 2014-03, Vol.104 (9) |
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| container_title | Applied physics letters |
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| creator | Bretos, I. Jiménez, R. Gutiérrez-Lázaro, C. Montero, I. Calzada, M. L. |
| description | The ferroelectric domain depinning in a polycrystalline BiFeO3 film is studied by a defect-mediated diffusion mechanism driven by a secondary re-oxidation anneal. The presence of defect complexes (oxygen-vacancy-associated dipoles) responsible for pinning is discussed from the current-voltage (I-V) characteristics of the film. Dissociation of these complexes by re-oxidation anneal produces the effective depinning of domains in the material. The released oxygen vacancies would be compensated at the re-oxidized state due to the valence change of Fe2+ to Fe3+. Improvement on domain mobility results in a larger contribution to ferroelectric switching, showing a room-temperature remanent polarization of 67 μC cm−2. |
| doi_str_mv | 10.1063/1.4867703 |
| format | Article |
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L.</creator><creatorcontrib>Bretos, I. ; Jiménez, R. ; Gutiérrez-Lázaro, C. ; Montero, I. ; Calzada, M. L.</creatorcontrib><description>The ferroelectric domain depinning in a polycrystalline BiFeO3 film is studied by a defect-mediated diffusion mechanism driven by a secondary re-oxidation anneal. The presence of defect complexes (oxygen-vacancy-associated dipoles) responsible for pinning is discussed from the current-voltage (I-V) characteristics of the film. Dissociation of these complexes by re-oxidation anneal produces the effective depinning of domains in the material. The released oxygen vacancies would be compensated at the re-oxidized state due to the valence change of Fe2+ to Fe3+. Improvement on domain mobility results in a larger contribution to ferroelectric switching, showing a room-temperature remanent polarization of 67 μC cm−2.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4867703</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Annealing ; Applied physics ; Bismuth ferrite ; Current voltage characteristics ; Defects ; Ferroelectric domains ; Ferroelectric materials ; Ferroelectricity ; Oxidation ; Polycrystals ; Thin films ; Vacancies</subject><ispartof>Applied physics letters, 2014-03, Vol.104 (9)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c292t-9bfd755b971e982480aa75962f521bbcb8407c106c7b7c5eee54b00708f4ff1e3</citedby><cites>FETCH-LOGICAL-c292t-9bfd755b971e982480aa75962f521bbcb8407c106c7b7c5eee54b00708f4ff1e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,781,785,27926,27927</link.rule.ids></links><search><creatorcontrib>Bretos, I.</creatorcontrib><creatorcontrib>Jiménez, R.</creatorcontrib><creatorcontrib>Gutiérrez-Lázaro, C.</creatorcontrib><creatorcontrib>Montero, I.</creatorcontrib><creatorcontrib>Calzada, M. L.</creatorcontrib><title>Defect-mediated ferroelectric domain depinning of polycrystalline BiFeO3 multiferroic thin films</title><title>Applied physics letters</title><description>The ferroelectric domain depinning in a polycrystalline BiFeO3 film is studied by a defect-mediated diffusion mechanism driven by a secondary re-oxidation anneal. The presence of defect complexes (oxygen-vacancy-associated dipoles) responsible for pinning is discussed from the current-voltage (I-V) characteristics of the film. Dissociation of these complexes by re-oxidation anneal produces the effective depinning of domains in the material. The released oxygen vacancies would be compensated at the re-oxidized state due to the valence change of Fe2+ to Fe3+. Improvement on domain mobility results in a larger contribution to ferroelectric switching, showing a room-temperature remanent polarization of 67 μC cm−2.</description><subject>Annealing</subject><subject>Applied physics</subject><subject>Bismuth ferrite</subject><subject>Current voltage characteristics</subject><subject>Defects</subject><subject>Ferroelectric domains</subject><subject>Ferroelectric materials</subject><subject>Ferroelectricity</subject><subject>Oxidation</subject><subject>Polycrystals</subject><subject>Thin films</subject><subject>Vacancies</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNotkDtPAzEQhC0EEiFQ8A8sUVFc8ON89pUQEkCKlAZq4_OtwZHvgX0p8u8xJNVqV_PNaAehW0oWlFT8gS5KVUlJ-BmaUSJlwSlV52hGCOFFVQt6ia5S2uVVMM5n6PMZHNip6KD1ZoIWO4hxgJBv0VvcDp3xPW5h9H3v-y88ODwO4WDjIU0mBN8DfvJr2HLc7cPk_-nMTd-Zcj506RpdOBMS3JzmHH2sV-_L12KzfXlbPm4Ky2o2FXXjWilEU0sKtWKlIsZIUVfMCUabxjaqJNLmF61spBUAIMqGEEmUK52jwOfo7ug7xuFnD2nSu2Ef-xypGWVSyUqxKqvujyobh5QiOD1G35l40JTovwI11acC-S9XrGMx</recordid><startdate>20140303</startdate><enddate>20140303</enddate><creator>Bretos, I.</creator><creator>Jiménez, R.</creator><creator>Gutiérrez-Lázaro, C.</creator><creator>Montero, I.</creator><creator>Calzada, M. 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| language | eng |
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| source | American Institute of Physics (AIP) Journals; Alma/SFX Local Collection |
| subjects | Annealing Applied physics Bismuth ferrite Current voltage characteristics Defects Ferroelectric domains Ferroelectric materials Ferroelectricity Oxidation Polycrystals Thin films Vacancies |
| title | Defect-mediated ferroelectric domain depinning of polycrystalline BiFeO3 multiferroic thin films |
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