The absence of Fraunhofer patterns in narrow Nb/InAs-nanowire/Nb junctions

The absence of Fraunhofer patterns in narrow Nb/InAs-nanowire/Nb junctions

We used InAs nanowires with two different charge carrier concentration to fabricate Josephson junctions with superconducting Nb electrodes. For highly doped nanowire junctions a supercurrent is observed up to T ∼ 5 K, for low doped nanowire junctions we were able to tune the Josephson current by a b...

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Hauptverfasser: Yusuf, Günel H, Batov, Igor E, Hardtdegen Hilde, Sladek Kamil, Winden Andreas, Panaitov Gregor, Grützmacher Detlev, Schäpers, Thomas
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Carrier density
Current carriers
Josephson junctions
Nanowires
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container_issue 1
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container_title
container_volume 1566
creator Yusuf, Günel H
Batov, Igor E
Hardtdegen Hilde
Sladek Kamil
Winden Andreas
Panaitov Gregor
Grützmacher Detlev
Schäpers, Thomas
description We used InAs nanowires with two different charge carrier concentration to fabricate Josephson junctions with superconducting Nb electrodes. For highly doped nanowire junctions a supercurrent is observed up to T ∼ 5 K, for low doped nanowire junctions we were able to tune the Josephson current by a back gate voltage. Owing to the transparent interface between Nb and InAs nanowires subharmonic gap structures due to multiple Andreev reflection have been observed. Furthermore, the effect of magnetic field on the Josephson current was investigated and a monotonous decrease of Josephson current was found. The observed behavior has been compared with a theoretical model.
doi_str_mv 10.1063/1.4848309
format Conference Proceeding
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subjects Carrier density
Current carriers
Josephson junctions
Nanowires
title The absence of Fraunhofer patterns in narrow Nb/InAs-nanowire/Nb junctions
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