Comparative optical study of epitaxial InGaAs quantum rods grown with As2 and As4 sources
Photoreflectance and photoluminescence (PL) spectroscopies are used to examine the optical properties and electronic structure of InGaAs quantum rods (QRs), embedded within InGaAs quantum well (QW). The nanostructures studied were grown by molecular beam epitaxy using As2 or As4 sources. The impact...
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| creator | Ramūnas, Nedzinskas Bronislovas, Čechavičius Kavaliauskas Julius Karpus Vytautas Valušis Gintaras Li Lianhe Khanna, Suraj P Linfield, Edmund H |
| description | Photoreflectance and photoluminescence (PL) spectroscopies are used to examine the optical properties and electronic structure of InGaAs quantum rods (QRs), embedded within InGaAs quantum well (QW). The nanostructures studied were grown by molecular beam epitaxy using As2 or As4 sources. The impact of As source on spectral features associated with interband optical transitions in the QRs and the surrounding QW are demonstrated. A red shift of the QR- and a blue shift of the QW-related optical transitions, along with a significant increase in PL intensity, have been observed if an As4 source is used. The changes in optical properties are attributed mainly to carrier confinement effects caused by variation of In content contrast between the QR material and the surrounding well. |
| doi_str_mv | 10.1063/1.4848503 |
| format | Conference Proceeding |
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The nanostructures studied were grown by molecular beam epitaxy using As2 or As4 sources. The impact of As source on spectral features associated with interband optical transitions in the QRs and the surrounding QW are demonstrated. A red shift of the QR- and a blue shift of the QW-related optical transitions, along with a significant increase in PL intensity, have been observed if an As4 source is used. The changes in optical properties are attributed mainly to carrier confinement effects caused by variation of In content contrast between the QR material and the surrounding well.</description><identifier>ISSN: 0094-243X</identifier><identifier>EISSN: 1551-7616</identifier><identifier>DOI: 10.1063/1.4848503</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Blue shift ; Doppler effect ; Electronic structure ; Epitaxial growth ; Molecular beam epitaxy ; Optical properties ; Photoluminescence ; Quantum wells ; Red shift ; Rods</subject><ispartof>AIP conference proceedings, 2013, Vol.1566 (1), p.499</ispartof><rights>2013 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,776,780,785,786,23909,23910,25118,27902</link.rule.ids></links><search><creatorcontrib>Ramūnas, Nedzinskas</creatorcontrib><creatorcontrib>Bronislovas, Čechavičius</creatorcontrib><creatorcontrib>Kavaliauskas Julius</creatorcontrib><creatorcontrib>Karpus Vytautas</creatorcontrib><creatorcontrib>Valušis Gintaras</creatorcontrib><creatorcontrib>Li Lianhe</creatorcontrib><creatorcontrib>Khanna, Suraj P</creatorcontrib><creatorcontrib>Linfield, Edmund H</creatorcontrib><title>Comparative optical study of epitaxial InGaAs quantum rods grown with As2 and As4 sources</title><title>AIP conference proceedings</title><description>Photoreflectance and photoluminescence (PL) spectroscopies are used to examine the optical properties and electronic structure of InGaAs quantum rods (QRs), embedded within InGaAs quantum well (QW). The nanostructures studied were grown by molecular beam epitaxy using As2 or As4 sources. The impact of As source on spectral features associated with interband optical transitions in the QRs and the surrounding QW are demonstrated. A red shift of the QR- and a blue shift of the QW-related optical transitions, along with a significant increase in PL intensity, have been observed if an As4 source is used. The changes in optical properties are attributed mainly to carrier confinement effects caused by variation of In content contrast between the QR material and the surrounding well.</description><subject>Blue shift</subject><subject>Doppler effect</subject><subject>Electronic structure</subject><subject>Epitaxial growth</subject><subject>Molecular beam epitaxy</subject><subject>Optical properties</subject><subject>Photoluminescence</subject><subject>Quantum wells</subject><subject>Red shift</subject><subject>Rods</subject><issn>0094-243X</issn><issn>1551-7616</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2013</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNotjc1Kw0AURgdRMFYXvsGA69Q7_5NlCFoLBUFc6KrcJDOa0mbSzMTq2xvQ1YEPvnMIuWWwZKDFPVtKK60CcUYyphTLjWb6nGQAhcy5FG-X5CrGHQAvjLEZea_CYcARU_flaBhS1-CexjS1PzR46oYu4Xc3T-t-hWWkxwn7NB3oGNpIP8Zw6umpS5-0jJxi386UNIZpbFy8Jhce99Hd_HNBXh4fXqunfPO8WlflJh8Km3LlHSguEdEzAQVqZxx6abRC32iuLdat4MB00TjZWim0A2nrukAveC0W5O5POozhOLmYtru53s-9LWfcGANi_vwCW1lSNQ</recordid><startdate>20131204</startdate><enddate>20131204</enddate><creator>Ramūnas, Nedzinskas</creator><creator>Bronislovas, Čechavičius</creator><creator>Kavaliauskas Julius</creator><creator>Karpus Vytautas</creator><creator>Valušis Gintaras</creator><creator>Li Lianhe</creator><creator>Khanna, Suraj P</creator><creator>Linfield, Edmund H</creator><general>American Institute of Physics</general><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20131204</creationdate><title>Comparative optical study of epitaxial InGaAs quantum rods grown with As2 and As4 sources</title><author>Ramūnas, Nedzinskas ; Bronislovas, Čechavičius ; Kavaliauskas Julius ; Karpus Vytautas ; Valušis Gintaras ; Li Lianhe ; Khanna, Suraj P ; Linfield, Edmund H</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p98t-5fe0524aaaf1309a6e7eaf4765afc6268abd320169ce4d8436e048bb9af32b3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Blue shift</topic><topic>Doppler effect</topic><topic>Electronic structure</topic><topic>Epitaxial growth</topic><topic>Molecular beam epitaxy</topic><topic>Optical properties</topic><topic>Photoluminescence</topic><topic>Quantum wells</topic><topic>Red shift</topic><topic>Rods</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ramūnas, Nedzinskas</creatorcontrib><creatorcontrib>Bronislovas, Čechavičius</creatorcontrib><creatorcontrib>Kavaliauskas Julius</creatorcontrib><creatorcontrib>Karpus Vytautas</creatorcontrib><creatorcontrib>Valušis Gintaras</creatorcontrib><creatorcontrib>Li Lianhe</creatorcontrib><creatorcontrib>Khanna, Suraj P</creatorcontrib><creatorcontrib>Linfield, Edmund H</creatorcontrib><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ramūnas, Nedzinskas</au><au>Bronislovas, Čechavičius</au><au>Kavaliauskas Julius</au><au>Karpus Vytautas</au><au>Valušis Gintaras</au><au>Li Lianhe</au><au>Khanna, Suraj P</au><au>Linfield, Edmund H</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Comparative optical study of epitaxial InGaAs quantum rods grown with As2 and As4 sources</atitle><btitle>AIP conference proceedings</btitle><date>2013-12-04</date><risdate>2013</risdate><volume>1566</volume><issue>1</issue><epage>499</epage><issn>0094-243X</issn><eissn>1551-7616</eissn><abstract>Photoreflectance and photoluminescence (PL) spectroscopies are used to examine the optical properties and electronic structure of InGaAs quantum rods (QRs), embedded within InGaAs quantum well (QW). The nanostructures studied were grown by molecular beam epitaxy using As2 or As4 sources. The impact of As source on spectral features associated with interband optical transitions in the QRs and the surrounding QW are demonstrated. A red shift of the QR- and a blue shift of the QW-related optical transitions, along with a significant increase in PL intensity, have been observed if an As4 source is used. The changes in optical properties are attributed mainly to carrier confinement effects caused by variation of In content contrast between the QR material and the surrounding well.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4848503</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0094-243X |
| ispartof | AIP conference proceedings, 2013, Vol.1566 (1), p.499 |
| issn | 0094-243X 1551-7616 |
| language | eng |
| recordid | cdi_proquest_journals_2127770384 |
| source | AIP Journals Complete |
| subjects | Blue shift Doppler effect Electronic structure Epitaxial growth Molecular beam epitaxy Optical properties Photoluminescence Quantum wells Red shift Rods |
| title | Comparative optical study of epitaxial InGaAs quantum rods grown with As2 and As4 sources |
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