A new mechanism of contact resistance formation in ohmic contacts to semiconductors with high dislocation density

We consider a new mechanism of current flow in a metal-semiconductor contact that describes the growth of contact resistivity ρc with temperature T. The theory developed allows us to explain our experimental results showing the anomalous increase in the temperature dependence of contact resistivity,...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Sachenko, A V, Belyaev, A E, Boltovets, N S, Konakova, R V, Kudryk, Ya Ya, Novitskii, S V, Sheremet, V N, Vinogradov, A O, Li J, Vitusevich, S A
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Contact resistance Dislocation density Electrical resistivity Group III-V semiconductors Silicon compounds Temperature dependence
Online-Zugang:	Volltext
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