Enhanced catalyst-free nucleation of GaN nanowires on amorphous Al2O3 by plasma-assisted molecular beam epitaxy

We report on plasma-assisted molecular beam epitaxial growth of GaN nanowires (NWs) on Si(111) substrates with a thin amorphous Al2O3 buffer layer deposited by atomic layer deposition. Comparison of nucleation kinetics shows that presence of amorphous Al2O3 buffer significantly enhances spontaneous...

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Veröffentlicht in:	Journal of applied physics 2014-01, Vol.115 (4)
Hauptverfasser:	Sobanska, Marta, Klosek, Kamil, Borysiuk, Jolanta, Kret, Slawomir, Tchutchulasvili, Giorgi, Gieraltowska, Sylwia, Zytkiewicz, Zbigniew R.
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Sprache:	eng
Schlagworte:	Aluminum oxide Amorphous materials Amorphous silicon Applied physics Atomic layer epitaxy Buffer layers Epitaxial growth Gallium nitrides Molecular beam epitaxy Nanowires Nucleation Photovoltaic cells Reaction kinetics Sapphire Silicon nitride Silicon substrates
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container_title	Journal of applied physics
container_volume	115
creator	Sobanska, Marta Klosek, Kamil Borysiuk, Jolanta Kret, Slawomir Tchutchulasvili, Giorgi Gieraltowska, Sylwia Zytkiewicz, Zbigniew R.
description	We report on plasma-assisted molecular beam epitaxial growth of GaN nanowires (NWs) on Si(111) substrates with a thin amorphous Al2O3 buffer layer deposited by atomic layer deposition. Comparison of nucleation kinetics shows that presence of amorphous Al2O3 buffer significantly enhances spontaneous nucleation of GaN NWs. Slower nucleation was observed on partially amorphous silicon nitride films. No growth of NWs was found on sapphire substrate under the same growth conditions which we explain by a low density of defects on monocrystalline substrate surface where NWs may nucleate. Our finding shows that tuning of substrate microstructure is an efficient tool to control rate of self-induced nucleation of GaN NWs.
doi_str_mv	10.1063/1.4863456
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Comparison of nucleation kinetics shows that presence of amorphous Al2O3 buffer significantly enhances spontaneous nucleation of GaN NWs. Slower nucleation was observed on partially amorphous silicon nitride films. No growth of NWs was found on sapphire substrate under the same growth conditions which we explain by a low density of defects on monocrystalline substrate surface where NWs may nucleate. Our finding shows that tuning of substrate microstructure is an efficient tool to control rate of self-induced nucleation of GaN NWs.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4863456</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Aluminum oxide ; Amorphous materials ; Amorphous silicon ; Applied physics ; Atomic layer epitaxy ; Buffer layers ; Epitaxial growth ; Gallium nitrides ; Molecular beam epitaxy ; Nanowires ; Nucleation ; Photovoltaic cells ; Reaction kinetics ; Sapphire ; Silicon nitride ; Silicon substrates</subject><ispartof>Journal of applied physics, 2014-01, Vol.115 (4)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c187t-a3a62bb623c7fc226caf9fe9775fff706c73d22de120abc2bc9da07b01766c633</citedby><cites>FETCH-LOGICAL-c187t-a3a62bb623c7fc226caf9fe9775fff706c73d22de120abc2bc9da07b01766c633</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Sobanska, Marta</creatorcontrib><creatorcontrib>Klosek, Kamil</creatorcontrib><creatorcontrib>Borysiuk, Jolanta</creatorcontrib><creatorcontrib>Kret, Slawomir</creatorcontrib><creatorcontrib>Tchutchulasvili, Giorgi</creatorcontrib><creatorcontrib>Gieraltowska, Sylwia</creatorcontrib><creatorcontrib>Zytkiewicz, Zbigniew R.</creatorcontrib><title>Enhanced catalyst-free nucleation of GaN nanowires on amorphous Al2O3 by plasma-assisted molecular beam epitaxy</title><title>Journal of applied physics</title><description>We report on plasma-assisted molecular beam epitaxial growth of GaN nanowires (NWs) on Si(111) substrates with a thin amorphous Al2O3 buffer layer deposited by atomic layer deposition. Comparison of nucleation kinetics shows that presence of amorphous Al2O3 buffer significantly enhances spontaneous nucleation of GaN NWs. Slower nucleation was observed on partially amorphous silicon nitride films. No growth of NWs was found on sapphire substrate under the same growth conditions which we explain by a low density of defects on monocrystalline substrate surface where NWs may nucleate. 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Comparison of nucleation kinetics shows that presence of amorphous Al2O3 buffer significantly enhances spontaneous nucleation of GaN NWs. Slower nucleation was observed on partially amorphous silicon nitride films. No growth of NWs was found on sapphire substrate under the same growth conditions which we explain by a low density of defects on monocrystalline substrate surface where NWs may nucleate. Our finding shows that tuning of substrate microstructure is an efficient tool to control rate of self-induced nucleation of GaN NWs.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4863456</doi></addata></record>
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subjects	Aluminum oxide Amorphous materials Amorphous silicon Applied physics Atomic layer epitaxy Buffer layers Epitaxial growth Gallium nitrides Molecular beam epitaxy Nanowires Nucleation Photovoltaic cells Reaction kinetics Sapphire Silicon nitride Silicon substrates
title	Enhanced catalyst-free nucleation of GaN nanowires on amorphous Al2O3 by plasma-assisted molecular beam epitaxy
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