Gate-tunable gigantic lattice deformation in VO2

We examined the impact of electric field on crystal lattice of vanadium dioxide (VO2) in a field-effect transistor geometry by in-situ synchrotron x-ray diffraction measurements. Whereas the c-axis lattice parameter of VO2 decreases through the thermally induced insulator-to-metal phase transition,...

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Veröffentlicht in:Applied physics letters 2014-01, Vol.104 (2)
Hauptverfasser: Okuyama, D., Nakano, M., Takeshita, S., Ohsumi, H., Tardif, S., Shibuya, K., Hatano, T., Yumoto, H., Koyama, T., Ohashi, H., Takata, M., Kawasaki, M., Arima, T., Tokura, Y., Iwasa, Y.
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Sprache:eng
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Zusammenfassung:We examined the impact of electric field on crystal lattice of vanadium dioxide (VO2) in a field-effect transistor geometry by in-situ synchrotron x-ray diffraction measurements. Whereas the c-axis lattice parameter of VO2 decreases through the thermally induced insulator-to-metal phase transition, the gate-induced metallization was found to result in a significant increase of the c-axis length by almost 1% from that of the thermally stabilized insulating state. We also found that this gate-induced gigantic lattice deformation occurs even at the thermally stabilized metallic state, enabling dynamic control of c-axis lattice parameter by more than 1% at room temperature.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4861901