A numerical approach to incorporate intrinsic material defects in micromagnetic simulations

Spintronics devices like racetrack memory rely on the controlled movement of domain walls in magnetic nanowires. The effects of distributed disorder on this movement have not yet been studied extensively. Defects give rise to a pinning potential that can be characterized in terms of a depth and an i...

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Veröffentlicht in:	Journal of applied physics 2014-05, Vol.115 (17)
Hauptverfasser:	Leliaert, J., Van de Wiele, B., Vansteenkiste, A., Laurson, L., Durin, G., Dupré, L., Van Waeyenberge, B.
Format:	Artikel
Sprache:	eng
Schlagworte:	Computer simulation Defects Domain walls Memory devices Nanowires Pinning Simulation Spintronics
Online-Zugang:	Volltext
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