Nanostructured VO2 film with high transparency and enhanced switching ratio in THz range

We investigated the terahertz (THz) transmission characteristics of semiconductor VO2 film and its THz suppression behavior after the phase transition. The VO2 films were deposited by the sol-gel method, and an in situ growth with surface nanocrystallization occurring in the films with increasing th...

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Veröffentlicht in:	Applied physics letters 2014-02, Vol.104 (7)
Hauptverfasser:	Shi, Qiwu, Huang, Wanxia, Lu, Tiecheng, Zhang, Yaxin, Yue, Fang, Qiao, Shen, Xiao, Yang
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Morphology Percolation Phase transitions Sol-gel processes Switching Thickness Vanadium oxides
Online-Zugang:	Volltext
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