Extended defect generation by Xenon implantation in silicon

We investigate the behavior of the Xe in the Si lattice re-growth after the implantation, varying the temperature of the annealing (750-1100°C) and the Xe dose. The Xe is implanted alone or with the species generally used to form the junction in VLSI Si devices. The TEM analysis detects 3 types of d...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Mica, I, Polignano, M L, Mauri, A G, Codegoni, D, Grasso, S, Pozzi, C, Soncini, V, Targa, P, Vad, K
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Agglomerated defects Epitaxial growth Fault detection Implantation Integrated circuits Silicon Stacking faults Very large scale integration Xenon
Online-Zugang:	Volltext
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