Positive bias temperature instability in p -type metal-oxide-semiconductor devices with HfSiON/SiO2 gate dielectrics

We present a detailed investigation on positive-bias temperature stress (PBTS) induced degradation of nitrided hafnium silicate (HfSiON)/SiO2 gate stack in n+-poly crystalline silicon (polySi) gate p-type metal-oxide-semiconductor (pMOS) devices. The measurement results indicate that gate dielectric...

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Veröffentlicht in:	Journal of applied physics 2014-02, Vol.115 (7)
Hauptverfasser:	Samanta, Piyas, Huang, Heng-Sheng, Chen, Shuang-Yuan, Liu, Chuan-Hsi, Cheng, Li-Wei
Format:	Artikel
Sprache:	eng
Schlagworte:	Bias Degradation Interface stability Leakage current Metal oxide semiconductors P-type semiconductors Semiconductor devices Silicon dioxide Threshold voltage Trapping
Online-Zugang:	Volltext
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