Effects of site occupancy and valence state of Fe ions on ferromagnetism in Fe-doped In2O3 diluted magnetic semiconductor
The effects of oxygen vacancies, valence state of Fe ions, and site occupancy of Fe ions on ferromagnetism in Fe-doped In2O3 were investigated both experimentally and theoretically. The Fe3+ ions prefer to occupy the 8b sites and do not contribute to the room temperature (RT) ferromagnetism. It is f...
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| Veröffentlicht in: | Applied physics letters 2014-02, Vol.104 (6) |
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| creator | Yan, Shiming Qiao, Wen Zhong, Wei Au, Chak-Tong Dou, Youwei |
| description | The effects of oxygen vacancies, valence state of Fe ions, and site occupancy of Fe ions on ferromagnetism in Fe-doped In2O3 were investigated both experimentally and theoretically. The Fe3+ ions prefer to occupy the 8b sites and do not contribute to the room temperature (RT) ferromagnetism. It is found that the presence of Fe2+ ions in In2O3 can be induced through the creation of oxygen vacancies. The Fe2+ ions tend to occupy the 24d sites, and the origin of RT ferromagnetism can be related to the strong Fe:4s and Fe:3d hybridization. Our findings not only give a clear picture on the origin of ferromagnetism of Fe-doped In2O3 but also provide a way to tune the magnetic property of Fe-doped In2O3 through the control of valence states of dopant and the control of sites for dopant occupation. |
| doi_str_mv | 10.1063/1.4865102 |
| format | Article |
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The Fe3+ ions prefer to occupy the 8b sites and do not contribute to the room temperature (RT) ferromagnetism. It is found that the presence of Fe2+ ions in In2O3 can be induced through the creation of oxygen vacancies. The Fe2+ ions tend to occupy the 24d sites, and the origin of RT ferromagnetism can be related to the strong Fe:4s and Fe:3d hybridization. Our findings not only give a clear picture on the origin of ferromagnetism of Fe-doped In2O3 but also provide a way to tune the magnetic property of Fe-doped In2O3 through the control of valence states of dopant and the control of sites for dopant occupation.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4865102</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Dopants ; Ferromagnetism ; Ferrous ions ; Indium oxides ; Magnetic properties ; Magnetic semiconductors ; Magnetism ; Vacancies</subject><ispartof>Applied physics letters, 2014-02, Vol.104 (6)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c257t-8d71eadfbc540cad9946c6323d5108ab73280564869e844b06142634bcfd2fdb3</citedby><cites>FETCH-LOGICAL-c257t-8d71eadfbc540cad9946c6323d5108ab73280564869e844b06142634bcfd2fdb3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,777,781,27905,27906</link.rule.ids></links><search><creatorcontrib>Yan, Shiming</creatorcontrib><creatorcontrib>Qiao, Wen</creatorcontrib><creatorcontrib>Zhong, Wei</creatorcontrib><creatorcontrib>Au, Chak-Tong</creatorcontrib><creatorcontrib>Dou, Youwei</creatorcontrib><title>Effects of site occupancy and valence state of Fe ions on ferromagnetism in Fe-doped In2O3 diluted magnetic semiconductor</title><title>Applied physics letters</title><description>The effects of oxygen vacancies, valence state of Fe ions, and site occupancy of Fe ions on ferromagnetism in Fe-doped In2O3 were investigated both experimentally and theoretically. The Fe3+ ions prefer to occupy the 8b sites and do not contribute to the room temperature (RT) ferromagnetism. It is found that the presence of Fe2+ ions in In2O3 can be induced through the creation of oxygen vacancies. The Fe2+ ions tend to occupy the 24d sites, and the origin of RT ferromagnetism can be related to the strong Fe:4s and Fe:3d hybridization. Our findings not only give a clear picture on the origin of ferromagnetism of Fe-doped In2O3 but also provide a way to tune the magnetic property of Fe-doped In2O3 through the control of valence states of dopant and the control of sites for dopant occupation.</description><subject>Applied physics</subject><subject>Dopants</subject><subject>Ferromagnetism</subject><subject>Ferrous ions</subject><subject>Indium oxides</subject><subject>Magnetic properties</subject><subject>Magnetic semiconductors</subject><subject>Magnetism</subject><subject>Vacancies</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNotkE1LAzEYhIMoWKsH_0HAk4et-dhNdo9SWi0UetFzyOZDUrrJmmSF_ntTuqeXYR7mZQaAZ4xWGDH6hld1yxqMyA1YYMR5RTFub8ECIUQr1jX4HjykdCyyIZQuwHljrVE5wWBhctnAoNQ0Sq_OUHoN_-TJeGVgyvLiWbg10AVfcA-tiTEM8seb7NIAnS9mpcNoNNx5cqBQu9OUi5oZBZMZnApeTyqH-AjurDwl8zTfJfjebr7Wn9X-8LFbv-8rRRqeq1ZzbKS2vWpqpKTuupopRgnVpWUre05JixpWWnemreseMVwTRuteWU2s7ukSvFxzxxh-J5OyOIYp-vJSEEw46zjjbaFer5SKIaVorBijG2Q8C4zEZVmBxbws_QeJTGrF</recordid><startdate>20140210</startdate><enddate>20140210</enddate><creator>Yan, Shiming</creator><creator>Qiao, Wen</creator><creator>Zhong, Wei</creator><creator>Au, Chak-Tong</creator><creator>Dou, Youwei</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20140210</creationdate><title>Effects of site occupancy and valence state of Fe ions on ferromagnetism in Fe-doped In2O3 diluted magnetic semiconductor</title><author>Yan, Shiming ; Qiao, Wen ; Zhong, Wei ; Au, Chak-Tong ; Dou, Youwei</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c257t-8d71eadfbc540cad9946c6323d5108ab73280564869e844b06142634bcfd2fdb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Applied physics</topic><topic>Dopants</topic><topic>Ferromagnetism</topic><topic>Ferrous ions</topic><topic>Indium oxides</topic><topic>Magnetic properties</topic><topic>Magnetic semiconductors</topic><topic>Magnetism</topic><topic>Vacancies</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yan, Shiming</creatorcontrib><creatorcontrib>Qiao, Wen</creatorcontrib><creatorcontrib>Zhong, Wei</creatorcontrib><creatorcontrib>Au, Chak-Tong</creatorcontrib><creatorcontrib>Dou, Youwei</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yan, Shiming</au><au>Qiao, Wen</au><au>Zhong, Wei</au><au>Au, Chak-Tong</au><au>Dou, Youwei</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of site occupancy and valence state of Fe ions on ferromagnetism in Fe-doped In2O3 diluted magnetic semiconductor</atitle><jtitle>Applied physics letters</jtitle><date>2014-02-10</date><risdate>2014</risdate><volume>104</volume><issue>6</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>The effects of oxygen vacancies, valence state of Fe ions, and site occupancy of Fe ions on ferromagnetism in Fe-doped In2O3 were investigated both experimentally and theoretically. The Fe3+ ions prefer to occupy the 8b sites and do not contribute to the room temperature (RT) ferromagnetism. It is found that the presence of Fe2+ ions in In2O3 can be induced through the creation of oxygen vacancies. The Fe2+ ions tend to occupy the 24d sites, and the origin of RT ferromagnetism can be related to the strong Fe:4s and Fe:3d hybridization. Our findings not only give a clear picture on the origin of ferromagnetism of Fe-doped In2O3 but also provide a way to tune the magnetic property of Fe-doped In2O3 through the control of valence states of dopant and the control of sites for dopant occupation.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4865102</doi></addata></record> |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Dopants Ferromagnetism Ferrous ions Indium oxides Magnetic properties Magnetic semiconductors Magnetism Vacancies |
| title | Effects of site occupancy and valence state of Fe ions on ferromagnetism in Fe-doped In2O3 diluted magnetic semiconductor |
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