Terahertz oscillations in an In0.53Ga0.47As submicron planar Gunn diode

The length of the transit region of a Gunn diode determines the natural frequency at which it operates in fundamental mode—the shorter the device, the higher the frequency of operation. The long-held view on Gunn diode design is that for a functioning device the minimum length of the transit region...

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Veröffentlicht in:	Journal of applied physics 2014-03, Vol.115 (11)
Hauptverfasser:	Khalid, Ata, Dunn, G. M., Macpherson, R. F., Thoms, S., Macintyre, D., Li, C., Steer, M. J., Papageorgiou, V., Thayne, I. G., Kuball, M., Oxley, C. H., Montes Bajo, M., Stephen, A., Glover, J., Cumming, D. R. S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Computer simulation Electron phonon interactions Gunn diodes Lower bounds Resonant frequencies Substrates Transportation planning
Online-Zugang:	Volltext
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