Investigation of abnormal negative threshold voltage shift under positive bias stress in input/output n-channel metal-oxide-semiconductor field-effect transistors with TiN/HfO2 structure using fast I-V measurement
This letter investigates abnormal negative threshold voltage shifts under positive bias stress in input/output (I/O) TiN/HfO2 n-channel metal-oxide-semiconductor field-effect transistors using fast I-V measurement. This phenomenon is attributed to a reversible charge/discharge effect in pre-existing...
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| Veröffentlicht in: | Applied physics letters 2014-03, Vol.104 (11) |
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| container_title | Applied physics letters |
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| creator | Ho, Szu-Han Chang, Ting-Chang Lu, Ying-Hsin Chen, Ching-En Tsai, Jyun-Yu Liu, Kuan-Ju Tseng, Tseung-Yuen Cheng, Osbert Huang, Cheng-Tung Lu, Ching-Sen |
| description | This letter investigates abnormal negative threshold voltage shifts under positive bias stress in input/output (I/O) TiN/HfO2 n-channel metal-oxide-semiconductor field-effect transistors using fast I-V measurement. This phenomenon is attributed to a reversible charge/discharge effect in pre-existing bulk traps. Moreover, in standard performance devices, threshold-voltage (Vt) shifts positively during fast I-V double sweep measurement. However, in I/O devices, Vt shifts negatively since electrons escape from bulk traps to metal gate rather than channel electrons injecting to bulk traps. Consequently, decreasing pre-existing bulk traps in I/O devices, which can be achieved by adopting HfxZr1−xO2 as gate oxide, can reduce the charge/discharge effect. |
| doi_str_mv | 10.1063/1.4868532 |
| format | Article |
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This phenomenon is attributed to a reversible charge/discharge effect in pre-existing bulk traps. Moreover, in standard performance devices, threshold-voltage (Vt) shifts positively during fast I-V double sweep measurement. However, in I/O devices, Vt shifts negatively since electrons escape from bulk traps to metal gate rather than channel electrons injecting to bulk traps. Consequently, decreasing pre-existing bulk traps in I/O devices, which can be achieved by adopting HfxZr1−xO2 as gate oxide, can reduce the charge/discharge effect.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4868532</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Bias ; Discharge ; Electrons ; Field effect transistors ; Hafnium oxide ; Input output ; MOSFETs ; Semiconductor devices ; Threshold voltage ; Transistors</subject><ispartof>Applied physics letters, 2014-03, Vol.104 (11)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c257t-ba5d2ab314e735c3f02379e3844633e180cba985c99d31b0be83698b2a76b9ea3</citedby><cites>FETCH-LOGICAL-c257t-ba5d2ab314e735c3f02379e3844633e180cba985c99d31b0be83698b2a76b9ea3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Ho, Szu-Han</creatorcontrib><creatorcontrib>Chang, Ting-Chang</creatorcontrib><creatorcontrib>Lu, Ying-Hsin</creatorcontrib><creatorcontrib>Chen, Ching-En</creatorcontrib><creatorcontrib>Tsai, Jyun-Yu</creatorcontrib><creatorcontrib>Liu, Kuan-Ju</creatorcontrib><creatorcontrib>Tseng, Tseung-Yuen</creatorcontrib><creatorcontrib>Cheng, Osbert</creatorcontrib><creatorcontrib>Huang, Cheng-Tung</creatorcontrib><creatorcontrib>Lu, Ching-Sen</creatorcontrib><title>Investigation of abnormal negative threshold voltage shift under positive bias stress in input/output n-channel metal-oxide-semiconductor field-effect transistors with TiN/HfO2 structure using fast I-V measurement</title><title>Applied physics letters</title><description>This letter investigates abnormal negative threshold voltage shifts under positive bias stress in input/output (I/O) TiN/HfO2 n-channel metal-oxide-semiconductor field-effect transistors using fast I-V measurement. This phenomenon is attributed to a reversible charge/discharge effect in pre-existing bulk traps. Moreover, in standard performance devices, threshold-voltage (Vt) shifts positively during fast I-V double sweep measurement. However, in I/O devices, Vt shifts negatively since electrons escape from bulk traps to metal gate rather than channel electrons injecting to bulk traps. Consequently, decreasing pre-existing bulk traps in I/O devices, which can be achieved by adopting HfxZr1−xO2 as gate oxide, can reduce the charge/discharge effect.</description><subject>Applied physics</subject><subject>Bias</subject><subject>Discharge</subject><subject>Electrons</subject><subject>Field effect transistors</subject><subject>Hafnium oxide</subject><subject>Input output</subject><subject>MOSFETs</subject><subject>Semiconductor devices</subject><subject>Threshold voltage</subject><subject>Transistors</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNotkU9r3DAQxU1oodu0h36DgZx6UFZ_1rZ8LKFtFkJzSXs1kj1aK9jSViNv2w_a7xNtEhh4zOPHezBTVZ8Evxa8UVtxvdONrpW8qDaCty1TQug31YZzrljT1eJd9Z7osay1VGpT_d-HE1L2B5N9DBAdGBtiWswMAc_mCSFPCWmK8winOGdzQKDJuwxrGDHBMZJ_xqw3BJQLS-BDmeOat3HNRSCwYTIh4AwLZjOz-NePyAgXP8QwrkOOCZzHeWToHA4ZcjKBPBWf4I_PEzz4H9tbdy_PDYVfE8JKPhzAGcqwZ79KsqFiLxjyh-qtMzPhx1e9rH5--_pwc8vu7r_vb77csUHWbWbW1KM0VokdtqoelONStR0qvds1SqHQfLCm0_XQdaMSllvUqum0laZtbIdGXVZXL7nHFH-v5Y79Y1xTKJW9FLJtdCdrUajPL9SQIlFC1x-TX0z61wven7_Wi_71a-oJywqPiQ</recordid><startdate>20140317</startdate><enddate>20140317</enddate><creator>Ho, Szu-Han</creator><creator>Chang, Ting-Chang</creator><creator>Lu, Ying-Hsin</creator><creator>Chen, Ching-En</creator><creator>Tsai, Jyun-Yu</creator><creator>Liu, Kuan-Ju</creator><creator>Tseng, Tseung-Yuen</creator><creator>Cheng, Osbert</creator><creator>Huang, Cheng-Tung</creator><creator>Lu, Ching-Sen</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20140317</creationdate><title>Investigation of abnormal negative threshold voltage shift under positive bias stress in input/output n-channel metal-oxide-semiconductor field-effect transistors with TiN/HfO2 structure using fast I-V measurement</title><author>Ho, Szu-Han ; Chang, Ting-Chang ; Lu, Ying-Hsin ; Chen, Ching-En ; Tsai, Jyun-Yu ; Liu, Kuan-Ju ; Tseng, Tseung-Yuen ; Cheng, Osbert ; Huang, Cheng-Tung ; Lu, Ching-Sen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c257t-ba5d2ab314e735c3f02379e3844633e180cba985c99d31b0be83698b2a76b9ea3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Applied physics</topic><topic>Bias</topic><topic>Discharge</topic><topic>Electrons</topic><topic>Field effect transistors</topic><topic>Hafnium oxide</topic><topic>Input output</topic><topic>MOSFETs</topic><topic>Semiconductor devices</topic><topic>Threshold voltage</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ho, Szu-Han</creatorcontrib><creatorcontrib>Chang, Ting-Chang</creatorcontrib><creatorcontrib>Lu, Ying-Hsin</creatorcontrib><creatorcontrib>Chen, Ching-En</creatorcontrib><creatorcontrib>Tsai, Jyun-Yu</creatorcontrib><creatorcontrib>Liu, Kuan-Ju</creatorcontrib><creatorcontrib>Tseng, Tseung-Yuen</creatorcontrib><creatorcontrib>Cheng, Osbert</creatorcontrib><creatorcontrib>Huang, Cheng-Tung</creatorcontrib><creatorcontrib>Lu, Ching-Sen</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ho, Szu-Han</au><au>Chang, Ting-Chang</au><au>Lu, Ying-Hsin</au><au>Chen, Ching-En</au><au>Tsai, Jyun-Yu</au><au>Liu, Kuan-Ju</au><au>Tseng, Tseung-Yuen</au><au>Cheng, Osbert</au><au>Huang, Cheng-Tung</au><au>Lu, Ching-Sen</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigation of abnormal negative threshold voltage shift under positive bias stress in input/output n-channel metal-oxide-semiconductor field-effect transistors with TiN/HfO2 structure using fast I-V measurement</atitle><jtitle>Applied physics letters</jtitle><date>2014-03-17</date><risdate>2014</risdate><volume>104</volume><issue>11</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>This letter investigates abnormal negative threshold voltage shifts under positive bias stress in input/output (I/O) TiN/HfO2 n-channel metal-oxide-semiconductor field-effect transistors using fast I-V measurement. This phenomenon is attributed to a reversible charge/discharge effect in pre-existing bulk traps. Moreover, in standard performance devices, threshold-voltage (Vt) shifts positively during fast I-V double sweep measurement. However, in I/O devices, Vt shifts negatively since electrons escape from bulk traps to metal gate rather than channel electrons injecting to bulk traps. Consequently, decreasing pre-existing bulk traps in I/O devices, which can be achieved by adopting HfxZr1−xO2 as gate oxide, can reduce the charge/discharge effect.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4868532</doi></addata></record> |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Bias Discharge Electrons Field effect transistors Hafnium oxide Input output MOSFETs Semiconductor devices Threshold voltage Transistors |
| title | Investigation of abnormal negative threshold voltage shift under positive bias stress in input/output n-channel metal-oxide-semiconductor field-effect transistors with TiN/HfO2 structure using fast I-V measurement |
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