Band alignment and electrical properties of Al2O3/ β -Ga2O3 heterojunctions

The band alignment of Al2O3/n-Ga2O3 was investigated by x-ray photoelectron spectroscopy (XPS). With a band gap of 6.8 ± 0.2 eV measured for Al2O3, the conduction and valence band offsets at the interface were estimated to be 1.5 ± 0.2 eV and 0.7 ± 0.2 eV, respectively. The conduction band offset wa...

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Veröffentlicht in:Applied physics letters 2014-05, Vol.104 (19)
Hauptverfasser: Kamimura, Takafumi, Sasaki, Kohei, Hoi Wong, Man, Krishnamurthy, Daivasigamani, Kuramata, Akito, Masui, Takekazu, Yamakoshi, Shigenobu, Higashiwaki, Masataka
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Sprache:eng
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