Band alignment and electrical properties of Al2O3/ β -Ga2O3 heterojunctions
The band alignment of Al2O3/n-Ga2O3 was investigated by x-ray photoelectron spectroscopy (XPS). With a band gap of 6.8 ± 0.2 eV measured for Al2O3, the conduction and valence band offsets at the interface were estimated to be 1.5 ± 0.2 eV and 0.7 ± 0.2 eV, respectively. The conduction band offset wa...
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| Veröffentlicht in: | Applied physics letters 2014-05, Vol.104 (19) |
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| container_title | Applied physics letters |
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| creator | Kamimura, Takafumi Sasaki, Kohei Hoi Wong, Man Krishnamurthy, Daivasigamani Kuramata, Akito Masui, Takekazu Yamakoshi, Shigenobu Higashiwaki, Masataka |
| description | The band alignment of Al2O3/n-Ga2O3 was investigated by x-ray photoelectron spectroscopy (XPS). With a band gap of 6.8 ± 0.2 eV measured for Al2O3, the conduction and valence band offsets at the interface were estimated to be 1.5 ± 0.2 eV and 0.7 ± 0.2 eV, respectively. The conduction band offset was also obtained from tunneling current in Al2O3/n-Ga2O3 (2¯01) metal-oxide-semiconductor (MOS) diodes using the Fowler-Nordheim model. The electrically extracted value was in good agreement with the XPS data. Furthermore, the MOS diodes exhibited small capacitance-voltage hysteresis loops, indicating the successful engineering of a high-quality Al2O3/Ga2O3 interface. |
| doi_str_mv | 10.1063/1.4876920 |
| format | Article |
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With a band gap of 6.8 ± 0.2 eV measured for Al2O3, the conduction and valence band offsets at the interface were estimated to be 1.5 ± 0.2 eV and 0.7 ± 0.2 eV, respectively. The conduction band offset was also obtained from tunneling current in Al2O3/n-Ga2O3 (2¯01) metal-oxide-semiconductor (MOS) diodes using the Fowler-Nordheim model. The electrically extracted value was in good agreement with the XPS data. Furthermore, the MOS diodes exhibited small capacitance-voltage hysteresis loops, indicating the successful engineering of a high-quality Al2O3/Ga2O3 interface.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4876920</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Alignment ; Aluminum oxide ; Applied physics ; Conduction bands ; Diodes ; Electrical properties ; Electrons ; Gallium oxides ; Heterojunctions ; Hysteresis loops ; Metal oxides ; Offsets ; Valence band ; X ray photoelectron spectroscopy ; X ray spectra</subject><ispartof>Applied physics letters, 2014-05, Vol.104 (19)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c292t-8e0341473858e2ea28b61c972dc1e4881a352d940b368cbf40f1493f62074a083</citedby><cites>FETCH-LOGICAL-c292t-8e0341473858e2ea28b61c972dc1e4881a352d940b368cbf40f1493f62074a083</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Kamimura, Takafumi</creatorcontrib><creatorcontrib>Sasaki, Kohei</creatorcontrib><creatorcontrib>Hoi Wong, Man</creatorcontrib><creatorcontrib>Krishnamurthy, Daivasigamani</creatorcontrib><creatorcontrib>Kuramata, Akito</creatorcontrib><creatorcontrib>Masui, Takekazu</creatorcontrib><creatorcontrib>Yamakoshi, Shigenobu</creatorcontrib><creatorcontrib>Higashiwaki, Masataka</creatorcontrib><title>Band alignment and electrical properties of Al2O3/ β -Ga2O3 heterojunctions</title><title>Applied physics letters</title><description>The band alignment of Al2O3/n-Ga2O3 was investigated by x-ray photoelectron spectroscopy (XPS). With a band gap of 6.8 ± 0.2 eV measured for Al2O3, the conduction and valence band offsets at the interface were estimated to be 1.5 ± 0.2 eV and 0.7 ± 0.2 eV, respectively. The conduction band offset was also obtained from tunneling current in Al2O3/n-Ga2O3 (2¯01) metal-oxide-semiconductor (MOS) diodes using the Fowler-Nordheim model. The electrically extracted value was in good agreement with the XPS data. Furthermore, the MOS diodes exhibited small capacitance-voltage hysteresis loops, indicating the successful engineering of a high-quality Al2O3/Ga2O3 interface.</description><subject>Alignment</subject><subject>Aluminum oxide</subject><subject>Applied physics</subject><subject>Conduction bands</subject><subject>Diodes</subject><subject>Electrical properties</subject><subject>Electrons</subject><subject>Gallium oxides</subject><subject>Heterojunctions</subject><subject>Hysteresis loops</subject><subject>Metal oxides</subject><subject>Offsets</subject><subject>Valence band</subject><subject>X ray photoelectron spectroscopy</subject><subject>X ray spectra</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNotUMFOAjEUbIwmInrwD5p48rDwXtttu0ckiiYkXPTclPJWlyy72JaDv-WH-E0ugdPMJJOZyTB2jzBB0HKKE2WNrgRcsBGCMYVEtJdsBACy0FWJ1-wmpe0gSyHliC2ffLfhvm0-ux11mR8VtRRybIJv-T72e4q5ocT7ms9asZJT_vfLi4UfKP-iTLHfHrqQm75Lt-yq9m2iuzOO2cfL8_v8tViuFm_z2bIIohK5sARSoTLSlpYEeWHXGkNlxCYgKWvRy1JsKgVrqW1Y1wpqVJWstQCjPFg5Zg-n3GHe94FSdtv-ELuh0gkURmujQQ2ux5MrxD6lSLXbx2bn449DcMezHLrzWfIf5L9ZOw</recordid><startdate>20140512</startdate><enddate>20140512</enddate><creator>Kamimura, Takafumi</creator><creator>Sasaki, Kohei</creator><creator>Hoi Wong, Man</creator><creator>Krishnamurthy, Daivasigamani</creator><creator>Kuramata, Akito</creator><creator>Masui, Takekazu</creator><creator>Yamakoshi, Shigenobu</creator><creator>Higashiwaki, Masataka</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20140512</creationdate><title>Band alignment and electrical properties of Al2O3/ β -Ga2O3 heterojunctions</title><author>Kamimura, Takafumi ; Sasaki, Kohei ; Hoi Wong, Man ; Krishnamurthy, Daivasigamani ; Kuramata, Akito ; Masui, Takekazu ; Yamakoshi, Shigenobu ; Higashiwaki, Masataka</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c292t-8e0341473858e2ea28b61c972dc1e4881a352d940b368cbf40f1493f62074a083</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Alignment</topic><topic>Aluminum oxide</topic><topic>Applied physics</topic><topic>Conduction bands</topic><topic>Diodes</topic><topic>Electrical properties</topic><topic>Electrons</topic><topic>Gallium oxides</topic><topic>Heterojunctions</topic><topic>Hysteresis loops</topic><topic>Metal oxides</topic><topic>Offsets</topic><topic>Valence band</topic><topic>X ray photoelectron spectroscopy</topic><topic>X ray spectra</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kamimura, Takafumi</creatorcontrib><creatorcontrib>Sasaki, Kohei</creatorcontrib><creatorcontrib>Hoi Wong, Man</creatorcontrib><creatorcontrib>Krishnamurthy, Daivasigamani</creatorcontrib><creatorcontrib>Kuramata, Akito</creatorcontrib><creatorcontrib>Masui, Takekazu</creatorcontrib><creatorcontrib>Yamakoshi, Shigenobu</creatorcontrib><creatorcontrib>Higashiwaki, Masataka</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kamimura, Takafumi</au><au>Sasaki, Kohei</au><au>Hoi Wong, Man</au><au>Krishnamurthy, Daivasigamani</au><au>Kuramata, Akito</au><au>Masui, Takekazu</au><au>Yamakoshi, Shigenobu</au><au>Higashiwaki, Masataka</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Band alignment and electrical properties of Al2O3/ β -Ga2O3 heterojunctions</atitle><jtitle>Applied physics letters</jtitle><date>2014-05-12</date><risdate>2014</risdate><volume>104</volume><issue>19</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>The band alignment of Al2O3/n-Ga2O3 was investigated by x-ray photoelectron spectroscopy (XPS). With a band gap of 6.8 ± 0.2 eV measured for Al2O3, the conduction and valence band offsets at the interface were estimated to be 1.5 ± 0.2 eV and 0.7 ± 0.2 eV, respectively. The conduction band offset was also obtained from tunneling current in Al2O3/n-Ga2O3 (2¯01) metal-oxide-semiconductor (MOS) diodes using the Fowler-Nordheim model. The electrically extracted value was in good agreement with the XPS data. Furthermore, the MOS diodes exhibited small capacitance-voltage hysteresis loops, indicating the successful engineering of a high-quality Al2O3/Ga2O3 interface.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4876920</doi><oa>free_for_read</oa></addata></record> |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Alignment Aluminum oxide Applied physics Conduction bands Diodes Electrical properties Electrons Gallium oxides Heterojunctions Hysteresis loops Metal oxides Offsets Valence band X ray photoelectron spectroscopy X ray spectra |
| title | Band alignment and electrical properties of Al2O3/ β -Ga2O3 heterojunctions |
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