Stress mapping of micromachined polycrystalline silicon devices via confocal Raman microscopy
Stress mapping of micromachined polycrystalline silicon devices with components in various levels of uniaxial tension was performed. Confocal Raman microscopy was used to form two-dimensional maps of Raman spectral shifts, which exhibited variations on the scale of the component and on the scale of...
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| Veröffentlicht in: | Applied physics letters 2014-05, Vol.104 (19) |
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| container_title | Applied physics letters |
| container_volume | 104 |
| creator | Myers, Grant A. Hazra, Siddharth S. de Boer, Maarten P. Michaels, Chris A. Stranick, Stephan J. Koseski, Ryan P. Cook, Robert F. DelRio, Frank W. |
| description | Stress mapping of micromachined polycrystalline silicon devices with components in various levels of uniaxial tension was performed. Confocal Raman microscopy was used to form two-dimensional maps of Raman spectral shifts, which exhibited variations on the scale of the component and on the scale of the microstructure. Finite element analysis models enabled direct comparison of the spatial variation in the measured shifts to that of the predicted stresses. The experimental shifts and model stresses were found to be linearly related in the uniaxial segment, with a proportionality constant in good agreement with calculations based on an opto-mechanical polycrystalline averaging analysis. |
| doi_str_mv | 10.1063/1.4878616 |
| format | Article |
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Confocal Raman microscopy was used to form two-dimensional maps of Raman spectral shifts, which exhibited variations on the scale of the component and on the scale of the microstructure. Finite element analysis models enabled direct comparison of the spatial variation in the measured shifts to that of the predicted stresses. The experimental shifts and model stresses were found to be linearly related in the uniaxial segment, with a proportionality constant in good agreement with calculations based on an opto-mechanical polycrystalline averaging analysis.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4878616</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Charged particles ; Finite element method ; Mapping ; Mathematical analysis ; Micromachining ; Microscopy ; Polycrystals ; Silicon devices ; Stresses</subject><ispartof>Applied physics letters, 2014-05, Vol.104 (19)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c257t-feb80b506a5c2744b02692789d8eed750ba71fd9637965a370ed0965cb307cfd3</citedby><cites>FETCH-LOGICAL-c257t-feb80b506a5c2744b02692789d8eed750ba71fd9637965a370ed0965cb307cfd3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Myers, Grant A.</creatorcontrib><creatorcontrib>Hazra, Siddharth S.</creatorcontrib><creatorcontrib>de Boer, Maarten P.</creatorcontrib><creatorcontrib>Michaels, Chris A.</creatorcontrib><creatorcontrib>Stranick, Stephan J.</creatorcontrib><creatorcontrib>Koseski, Ryan P.</creatorcontrib><creatorcontrib>Cook, Robert F.</creatorcontrib><creatorcontrib>DelRio, Frank W.</creatorcontrib><title>Stress mapping of micromachined polycrystalline silicon devices via confocal Raman microscopy</title><title>Applied physics letters</title><description>Stress mapping of micromachined polycrystalline silicon devices with components in various levels of uniaxial tension was performed. Confocal Raman microscopy was used to form two-dimensional maps of Raman spectral shifts, which exhibited variations on the scale of the component and on the scale of the microstructure. Finite element analysis models enabled direct comparison of the spatial variation in the measured shifts to that of the predicted stresses. The experimental shifts and model stresses were found to be linearly related in the uniaxial segment, with a proportionality constant in good agreement with calculations based on an opto-mechanical polycrystalline averaging analysis.</description><subject>Applied physics</subject><subject>Charged particles</subject><subject>Finite element method</subject><subject>Mapping</subject><subject>Mathematical analysis</subject><subject>Micromachining</subject><subject>Microscopy</subject><subject>Polycrystals</subject><subject>Silicon devices</subject><subject>Stresses</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNotUEtLxDAYDKLgunrwHwQ8eej6JWmS9iiLL1gQfBwlpHlolrapSXeh_97K7mm--RhmhkHomsCKgGB3ZFVWshJEnKAFASkLRkh1ihYAwApRc3KOLnLezpRTxhbo631MLmfc6WEI_TeOHnfBpNhp8xN6Z_EQ28mkKY-6becHzqENJvbYun0wLuN90HjmPhrd4jfd6f5gkE0cpkt05nWb3dURl-jz8eFj_VxsXp9e1vebwlAux8K7poKGg9DcUFmWDVBRU1nVtnLOSg6NlsTbWjBZC66ZBGdhvkzDQBpv2RLdHHyHFH93Lo9qG3epnyMVJVQKIWQpZtXtQfVfLyfn1ZBCp9OkCKj_9RRRx_XYH2sNYnI</recordid><startdate>20140512</startdate><enddate>20140512</enddate><creator>Myers, Grant A.</creator><creator>Hazra, Siddharth S.</creator><creator>de Boer, Maarten P.</creator><creator>Michaels, Chris A.</creator><creator>Stranick, Stephan J.</creator><creator>Koseski, Ryan P.</creator><creator>Cook, Robert F.</creator><creator>DelRio, Frank W.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20140512</creationdate><title>Stress mapping of micromachined polycrystalline silicon devices via confocal Raman microscopy</title><author>Myers, Grant A. ; Hazra, Siddharth S. ; de Boer, Maarten P. ; Michaels, Chris A. ; Stranick, Stephan J. ; Koseski, Ryan P. ; Cook, Robert F. ; DelRio, Frank W.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c257t-feb80b506a5c2744b02692789d8eed750ba71fd9637965a370ed0965cb307cfd3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Applied physics</topic><topic>Charged particles</topic><topic>Finite element method</topic><topic>Mapping</topic><topic>Mathematical analysis</topic><topic>Micromachining</topic><topic>Microscopy</topic><topic>Polycrystals</topic><topic>Silicon devices</topic><topic>Stresses</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Myers, Grant A.</creatorcontrib><creatorcontrib>Hazra, Siddharth S.</creatorcontrib><creatorcontrib>de Boer, Maarten P.</creatorcontrib><creatorcontrib>Michaels, Chris A.</creatorcontrib><creatorcontrib>Stranick, Stephan J.</creatorcontrib><creatorcontrib>Koseski, Ryan P.</creatorcontrib><creatorcontrib>Cook, Robert F.</creatorcontrib><creatorcontrib>DelRio, Frank W.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Myers, Grant A.</au><au>Hazra, Siddharth S.</au><au>de Boer, Maarten P.</au><au>Michaels, Chris A.</au><au>Stranick, Stephan J.</au><au>Koseski, Ryan P.</au><au>Cook, Robert F.</au><au>DelRio, Frank W.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Stress mapping of micromachined polycrystalline silicon devices via confocal Raman microscopy</atitle><jtitle>Applied physics letters</jtitle><date>2014-05-12</date><risdate>2014</risdate><volume>104</volume><issue>19</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Stress mapping of micromachined polycrystalline silicon devices with components in various levels of uniaxial tension was performed. Confocal Raman microscopy was used to form two-dimensional maps of Raman spectral shifts, which exhibited variations on the scale of the component and on the scale of the microstructure. Finite element analysis models enabled direct comparison of the spatial variation in the measured shifts to that of the predicted stresses. The experimental shifts and model stresses were found to be linearly related in the uniaxial segment, with a proportionality constant in good agreement with calculations based on an opto-mechanical polycrystalline averaging analysis.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4878616</doi></addata></record> |
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| ispartof | Applied physics letters, 2014-05, Vol.104 (19) |
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| language | eng |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Charged particles Finite element method Mapping Mathematical analysis Micromachining Microscopy Polycrystals Silicon devices Stresses |
| title | Stress mapping of micromachined polycrystalline silicon devices via confocal Raman microscopy |
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