Hydrogen ion-selective electrolyte-gated organic field-effect transistor for pH sensing
A H+ ion-selective electrolyte-gated organic field-effect transistor (IS-EGOFET) with a broad detection range between pH 3 and pH 12, is presented. This pH sensor relies on an integrated EGOFET used as a transducer in combination with an ionophore-doped polymeric ion-selective membrane serving as a...
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| Veröffentlicht in: | Applied physics letters 2014-05, Vol.104 (19) |
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| container_title | Applied physics letters |
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| creator | Kofler, Johannes Schmoltner, Kerstin Klug, Andreas List-Kratochvil, Emil J. W. |
| description | A H+ ion-selective electrolyte-gated organic field-effect transistor (IS-EGOFET) with a broad detection range between pH 3 and pH 12, is presented. This pH sensor relies on an integrated EGOFET used as a transducer in combination with an ionophore-doped polymeric ion-selective membrane serving as a sensing element. The broad detection range was possible through a dynamic measurement protocol comprising a readjustment of the gate voltage, which ensures a stable device operation at a constant working point. The effectiveness of this dynamic approach is confirmed by stability investigations. On the basis of this pH sensor concept, the importance of an appropriate gating electrolyte is highlighted, giving insights into the working mechanism of EGOFETs. |
| doi_str_mv | 10.1063/1.4878539 |
| format | Article |
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W.</creator><creatorcontrib>Kofler, Johannes ; Schmoltner, Kerstin ; Klug, Andreas ; List-Kratochvil, Emil J. W.</creatorcontrib><description>A H+ ion-selective electrolyte-gated organic field-effect transistor (IS-EGOFET) with a broad detection range between pH 3 and pH 12, is presented. This pH sensor relies on an integrated EGOFET used as a transducer in combination with an ionophore-doped polymeric ion-selective membrane serving as a sensing element. The broad detection range was possible through a dynamic measurement protocol comprising a readjustment of the gate voltage, which ensures a stable device operation at a constant working point. The effectiveness of this dynamic approach is confirmed by stability investigations. On the basis of this pH sensor concept, the importance of an appropriate gating electrolyte is highlighted, giving insights into the working mechanism of EGOFETs.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4878539</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Dynamic stability ; Electrolytes ; Field effect transistors ; Hydrogen ions ; Semiconductor devices ; Transistors</subject><ispartof>Applied physics letters, 2014-05, Vol.104 (19)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c257t-c98f2183a4f77bbb7c086e3ea1815d9fcc83d3ea843e541e8f02b1d256e75693</citedby><cites>FETCH-LOGICAL-c257t-c98f2183a4f77bbb7c086e3ea1815d9fcc83d3ea843e541e8f02b1d256e75693</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Kofler, Johannes</creatorcontrib><creatorcontrib>Schmoltner, Kerstin</creatorcontrib><creatorcontrib>Klug, Andreas</creatorcontrib><creatorcontrib>List-Kratochvil, Emil J. W.</creatorcontrib><title>Hydrogen ion-selective electrolyte-gated organic field-effect transistor for pH sensing</title><title>Applied physics letters</title><description>A H+ ion-selective electrolyte-gated organic field-effect transistor (IS-EGOFET) with a broad detection range between pH 3 and pH 12, is presented. This pH sensor relies on an integrated EGOFET used as a transducer in combination with an ionophore-doped polymeric ion-selective membrane serving as a sensing element. The broad detection range was possible through a dynamic measurement protocol comprising a readjustment of the gate voltage, which ensures a stable device operation at a constant working point. The effectiveness of this dynamic approach is confirmed by stability investigations. On the basis of this pH sensor concept, the importance of an appropriate gating electrolyte is highlighted, giving insights into the working mechanism of EGOFETs.</description><subject>Applied physics</subject><subject>Dynamic stability</subject><subject>Electrolytes</subject><subject>Field effect transistors</subject><subject>Hydrogen ions</subject><subject>Semiconductor devices</subject><subject>Transistors</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNotkE9LAzEQxYMoWKsHv0HAk4fUTLLZZI9S1AoFLwWPYTc7Wbasm5qkQr-92z8Dw8wbfryBR8gj8AXwUr7AojDaKFldkRlwrZkEMNdkxjmXrKwU3JK7lLaTVELKGfleHdoYOhxpH0aWcECX-z-kpyWG4ZCRdXXGlobY1WPvqO9xaBl6PwE0x3pMfcohUj_1bkUTToexuyc3vh4SPlzmnGze3zbLFVt_fXwuX9fMCaUzc5XxAoysC6910zTacVOixBoMqLbyzhnZTtIUElUBaDwXDbRClahVWck5eTrb7mL43WPKdhv2cZw-WgFCl8cyE_V8plwMKUX0dhf7nzoeLHB7jM2CvcQm_wEqtV_E</recordid><startdate>20140512</startdate><enddate>20140512</enddate><creator>Kofler, Johannes</creator><creator>Schmoltner, Kerstin</creator><creator>Klug, Andreas</creator><creator>List-Kratochvil, Emil J. 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W.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c257t-c98f2183a4f77bbb7c086e3ea1815d9fcc83d3ea843e541e8f02b1d256e75693</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Applied physics</topic><topic>Dynamic stability</topic><topic>Electrolytes</topic><topic>Field effect transistors</topic><topic>Hydrogen ions</topic><topic>Semiconductor devices</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kofler, Johannes</creatorcontrib><creatorcontrib>Schmoltner, Kerstin</creatorcontrib><creatorcontrib>Klug, Andreas</creatorcontrib><creatorcontrib>List-Kratochvil, Emil J. 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This pH sensor relies on an integrated EGOFET used as a transducer in combination with an ionophore-doped polymeric ion-selective membrane serving as a sensing element. The broad detection range was possible through a dynamic measurement protocol comprising a readjustment of the gate voltage, which ensures a stable device operation at a constant working point. The effectiveness of this dynamic approach is confirmed by stability investigations. On the basis of this pH sensor concept, the importance of an appropriate gating electrolyte is highlighted, giving insights into the working mechanism of EGOFETs.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4878539</doi></addata></record> |
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| ispartof | Applied physics letters, 2014-05, Vol.104 (19) |
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| language | eng |
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| source | American Institute of Physics; Alma/SFX Local Collection |
| subjects | Applied physics Dynamic stability Electrolytes Field effect transistors Hydrogen ions Semiconductor devices Transistors |
| title | Hydrogen ion-selective electrolyte-gated organic field-effect transistor for pH sensing |
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