Controlling the surface roughness of epitaxial SiC on silicon
The surface of cubic silicon carbide (3C-SiC) hetero-epitaxial films grown on the (111) surface of silicon is a promising template for the subsequent epitaxial growth of III-V semiconductor layers and graphene. We investigate growth and post-growth approaches for controlling the surface roughness of...
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Veröffentlicht in: | Journal of applied physics 2014-05, Vol.115 (20) |
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creator | Mishra, N. Hold, L. Iacopi, A. Gupta, B. Motta, N. Iacopi, F. |
description | The surface of cubic silicon carbide (3C-SiC) hetero-epitaxial films grown on the (111) surface of silicon is a promising template for the subsequent epitaxial growth of III-V semiconductor layers and graphene. We investigate growth and post-growth approaches for controlling the surface roughness of epitaxial SiC to produce an optimal template. We first explore 3C-SiC growth on various degrees of offcut Si(111) substrates, although we observe that the SiC roughness tends to worsen as the degree of offcut increases. Hence we focus on post-growth approaches available on full wafers, comparing chemical mechanical polishing (CMP) and a novel plasma smoothening process. The CMP leads to a dramatic improvement, bringing the SiC surface roughness down to sub-nanometer level, though removing about 200 nm of the SiC layer. On the other hand, our proposed HCl plasma process appears very effective in smoothening selectively the sharpest surface topography, leading up to 30% improvement in SiC roughness with only about 50 nm thickness loss. We propose a simple physical model explaining the action of the plasma smoothening. |
doi_str_mv | 10.1063/1.4879237 |
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We investigate growth and post-growth approaches for controlling the surface roughness of epitaxial SiC to produce an optimal template. We first explore 3C-SiC growth on various degrees of offcut Si(111) substrates, although we observe that the SiC roughness tends to worsen as the degree of offcut increases. Hence we focus on post-growth approaches available on full wafers, comparing chemical mechanical polishing (CMP) and a novel plasma smoothening process. The CMP leads to a dramatic improvement, bringing the SiC surface roughness down to sub-nanometer level, though removing about 200 nm of the SiC layer. On the other hand, our proposed HCl plasma process appears very effective in smoothening selectively the sharpest surface topography, leading up to 30% improvement in SiC roughness with only about 50 nm thickness loss. 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We propose a simple physical model explaining the action of the plasma smoothening.</description><subject>Applied physics</subject><subject>Chemical-mechanical polishing</subject><subject>Epitaxial growth</subject><subject>Graphene</subject><subject>Group III-V semiconductors</subject><subject>Organic chemistry</subject><subject>Silicon carbide</subject><subject>Silicon substrates</subject><subject>Surface roughness</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNotkM1KAzEYRYMoWKsL3yDgysXU70tm8rNwIYN_UHChrkOaSdqUcVKTGdC319KuLlwO98Ih5BphgSD4HS5qJTXj8oTMEJSuZNPAKZkBMKyUlvqcXJSyBUBUXM_IfZuGMae-j8OajhtPy5SDdZ7mNK03gy-FpkD9Lo72J9qevseWpoGW2EeXhktyFmxf_NUx5-Tz6fGjfamWb8-v7cOyckyzseqYC1oq6TgIJVYq-JUUStkO9UpijY2rQXShUyzoWmgrOWPoGtF5i_-94nNyc9jd5fQ9-TKabZry8H9pGDIpBAfYU7cHyuVUSvbB7HL8svnXIJi9HYPmaIf_AQpKVZM</recordid><startdate>20140528</startdate><enddate>20140528</enddate><creator>Mishra, N.</creator><creator>Hold, L.</creator><creator>Iacopi, A.</creator><creator>Gupta, B.</creator><creator>Motta, N.</creator><creator>Iacopi, F.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20140528</creationdate><title>Controlling the surface roughness of epitaxial SiC on silicon</title><author>Mishra, N. ; Hold, L. ; Iacopi, A. ; Gupta, B. ; Motta, N. ; Iacopi, F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c292t-d2cf9787c30686b8feb7688ad19b71415c406dfd82f9469a73221c56dea16df83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Applied physics</topic><topic>Chemical-mechanical polishing</topic><topic>Epitaxial growth</topic><topic>Graphene</topic><topic>Group III-V semiconductors</topic><topic>Organic chemistry</topic><topic>Silicon carbide</topic><topic>Silicon substrates</topic><topic>Surface roughness</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mishra, N.</creatorcontrib><creatorcontrib>Hold, L.</creatorcontrib><creatorcontrib>Iacopi, A.</creatorcontrib><creatorcontrib>Gupta, B.</creatorcontrib><creatorcontrib>Motta, N.</creatorcontrib><creatorcontrib>Iacopi, F.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Mishra, N.</au><au>Hold, L.</au><au>Iacopi, A.</au><au>Gupta, B.</au><au>Motta, N.</au><au>Iacopi, F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Controlling the surface roughness of epitaxial SiC on silicon</atitle><jtitle>Journal of applied physics</jtitle><date>2014-05-28</date><risdate>2014</risdate><volume>115</volume><issue>20</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>The surface of cubic silicon carbide (3C-SiC) hetero-epitaxial films grown on the (111) surface of silicon is a promising template for the subsequent epitaxial growth of III-V semiconductor layers and graphene. We investigate growth and post-growth approaches for controlling the surface roughness of epitaxial SiC to produce an optimal template. We first explore 3C-SiC growth on various degrees of offcut Si(111) substrates, although we observe that the SiC roughness tends to worsen as the degree of offcut increases. Hence we focus on post-growth approaches available on full wafers, comparing chemical mechanical polishing (CMP) and a novel plasma smoothening process. The CMP leads to a dramatic improvement, bringing the SiC surface roughness down to sub-nanometer level, though removing about 200 nm of the SiC layer. On the other hand, our proposed HCl plasma process appears very effective in smoothening selectively the sharpest surface topography, leading up to 30% improvement in SiC roughness with only about 50 nm thickness loss. 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subjects | Applied physics Chemical-mechanical polishing Epitaxial growth Graphene Group III-V semiconductors Organic chemistry Silicon carbide Silicon substrates Surface roughness |
title | Controlling the surface roughness of epitaxial SiC on silicon |
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