Microstructural Characterization of Defects and Chemical Etching for HgCdSe/ZnTe/Si (211) Heterostructures

In this work, transmission electron microscopy has been used to investigate HgCdSe/ZnTe/Si (211) heterostructures grown by molecular beam epitaxy and to study the effects of chemical etchants for measurements of defect density in the HgCdSe epilayers. Both ZnTe/Si and HgCdSe/ZnTe interfaces were dec...

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Veröffentlicht in:	Journal of electronic materials 2019-01, Vol.48 (1), p.571-582
Hauptverfasser:	Vaghayenegar, M., Doyle, K. J., Trivedi, S., Wijewarnasuriya, P., Smith, David J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Burgers vector Characterization and Evaluation of Materials Chemical etching Chemistry and Materials Science Defects Dislocations Electronics and Microelectronics Electrons Epitaxial growth Etch pits Etchants Heterostructures Hydrochloric acid Image analysis Image resolution Instrumentation Lactic acid Materials Science Molecular beam epitaxy Nitric acid Optical and Electronic Materials Organic chemistry Solid State Physics Stacking faults Transmission electron microscopy Zinc tellurides
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