Microstructural Characterization of Defects and Chemical Etching for HgCdSe/ZnTe/Si (211) Heterostructures
In this work, transmission electron microscopy has been used to investigate HgCdSe/ZnTe/Si (211) heterostructures grown by molecular beam epitaxy and to study the effects of chemical etchants for measurements of defect density in the HgCdSe epilayers. Both ZnTe/Si and HgCdSe/ZnTe interfaces were dec...
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| Veröffentlicht in: | Journal of electronic materials 2019-01, Vol.48 (1), p.571-582 |
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| creator | Vaghayenegar, M. Doyle, K. J. Trivedi, S. Wijewarnasuriya, P. Smith, David J. |
| description | In this work, transmission electron microscopy has been used to investigate HgCdSe/ZnTe/Si (211) heterostructures grown by molecular beam epitaxy and to study the effects of chemical etchants for measurements of defect density in the HgCdSe epilayers. Both ZnTe/Si and HgCdSe/ZnTe interfaces were decorated with {111}-type stacking faults inclined at angles of ∼ 19° or ∼ 90° with respect to the interface plane. Similar stacking faults were also present in the upper regions of the HgCdSe films. High-resolution imaging and Fourier image analysis revealed dislocations, mostly with
a
3
1
¯
11
Burgers vector, at both ZnTe/Si and HgCdSe/ZnTe interfaces. Etching solutions based on different combinations of nitric acid, hydrochloric acid and lactic acid were tried in attempts to identify an etchant that provided one-to-one correspondence between etch pits and defects in the HgCdSe layer. Focused-ion-beam milling and transmission electron microscopy were used to prepare site-specific cross-section samples from across the etch pits. However, many defects in regions surrounding the etch pits were unaffected by the various different etchants. |
| doi_str_mv | 10.1007/s11664-018-6737-0 |
| format | Article |
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a
3
1
¯
11
Burgers vector, at both ZnTe/Si and HgCdSe/ZnTe interfaces. Etching solutions based on different combinations of nitric acid, hydrochloric acid and lactic acid were tried in attempts to identify an etchant that provided one-to-one correspondence between etch pits and defects in the HgCdSe layer. Focused-ion-beam milling and transmission electron microscopy were used to prepare site-specific cross-section samples from across the etch pits. However, many defects in regions surrounding the etch pits were unaffected by the various different etchants.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-018-6737-0</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Burgers vector ; Characterization and Evaluation of Materials ; Chemical etching ; Chemistry and Materials Science ; Defects ; Dislocations ; Electronics and Microelectronics ; Electrons ; Epitaxial growth ; Etch pits ; Etchants ; Heterostructures ; Hydrochloric acid ; Image analysis ; Image resolution ; Instrumentation ; Lactic acid ; Materials Science ; Molecular beam epitaxy ; Nitric acid ; Optical and Electronic Materials ; Organic chemistry ; Solid State Physics ; Stacking faults ; Transmission electron microscopy ; Zinc tellurides</subject><ispartof>Journal of electronic materials, 2019-01, Vol.48 (1), p.571-582</ispartof><rights>The Minerals, Metals & Materials Society 2018</rights><rights>Journal of Electronic Materials is a copyright of Springer, (2018). All Rights Reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-9de0f2b51333e3cc7eecd52ffd75317405b46ddf04e7a97df246ff81d543cff03</citedby><cites>FETCH-LOGICAL-c316t-9de0f2b51333e3cc7eecd52ffd75317405b46ddf04e7a97df246ff81d543cff03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11664-018-6737-0$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11664-018-6737-0$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Vaghayenegar, M.</creatorcontrib><creatorcontrib>Doyle, K. J.</creatorcontrib><creatorcontrib>Trivedi, S.</creatorcontrib><creatorcontrib>Wijewarnasuriya, P.</creatorcontrib><creatorcontrib>Smith, David J.</creatorcontrib><title>Microstructural Characterization of Defects and Chemical Etching for HgCdSe/ZnTe/Si (211) Heterostructures</title><title>Journal of electronic materials</title><addtitle>Journal of Elec Materi</addtitle><description>In this work, transmission electron microscopy has been used to investigate HgCdSe/ZnTe/Si (211) heterostructures grown by molecular beam epitaxy and to study the effects of chemical etchants for measurements of defect density in the HgCdSe epilayers. Both ZnTe/Si and HgCdSe/ZnTe interfaces were decorated with {111}-type stacking faults inclined at angles of ∼ 19° or ∼ 90° with respect to the interface plane. Similar stacking faults were also present in the upper regions of the HgCdSe films. High-resolution imaging and Fourier image analysis revealed dislocations, mostly with
a
3
1
¯
11
Burgers vector, at both ZnTe/Si and HgCdSe/ZnTe interfaces. Etching solutions based on different combinations of nitric acid, hydrochloric acid and lactic acid were tried in attempts to identify an etchant that provided one-to-one correspondence between etch pits and defects in the HgCdSe layer. Focused-ion-beam milling and transmission electron microscopy were used to prepare site-specific cross-section samples from across the etch pits. However, many defects in regions surrounding the etch pits were unaffected by the various different etchants.</description><subject>Burgers vector</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemical etching</subject><subject>Chemistry and Materials Science</subject><subject>Defects</subject><subject>Dislocations</subject><subject>Electronics and Microelectronics</subject><subject>Electrons</subject><subject>Epitaxial growth</subject><subject>Etch pits</subject><subject>Etchants</subject><subject>Heterostructures</subject><subject>Hydrochloric acid</subject><subject>Image analysis</subject><subject>Image resolution</subject><subject>Instrumentation</subject><subject>Lactic acid</subject><subject>Materials Science</subject><subject>Molecular beam epitaxy</subject><subject>Nitric acid</subject><subject>Optical and Electronic Materials</subject><subject>Organic chemistry</subject><subject>Solid State Physics</subject><subject>Stacking faults</subject><subject>Transmission electron microscopy</subject><subject>Zinc tellurides</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>8G5</sourceid><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNp1kLFOwzAQhi0EEqXwAGyRWGAI9dmxnY4oFIpUxNAiIRYrtc9tqjYptjPA05MqCCamG-77v9P9hFwCvQVK1SgASJmlFPJUKq5SekQGIDKeQi7fjsmAcgmpYFyckrMQNpSCgBwGZPNcGd-E6FsTW19uk2Jd-tJE9NVXGaumThqX3KNDE0NS1rbb464yHTiJZl3Vq8Q1PpmuCjvH0Xu9wNG8Sq4ZwE0yxc7yq8ZwTk5cuQ148TOH5PVhsiim6ezl8am4m6WGg4zp2CJ1bCmAc47cGIVorGDOWSU4qIyKZSatdTRDVY6VdSyTzuVgu2-Nc5QPyVXv3fvmo8UQ9aZpfd2d1AyYomMqctVR0FOH94NHp_e-2pX-UwPVh0p1X6nuKtWHSvXBzPpM6Nh6hf7P_H_oG5GGecA</recordid><startdate>20190101</startdate><enddate>20190101</enddate><creator>Vaghayenegar, M.</creator><creator>Doyle, K. J.</creator><creator>Trivedi, S.</creator><creator>Wijewarnasuriya, P.</creator><creator>Smith, David J.</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8AF</scope><scope>8AO</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8G5</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M2O</scope><scope>M2P</scope><scope>M7S</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0X</scope></search><sort><creationdate>20190101</creationdate><title>Microstructural Characterization of Defects and Chemical Etching for HgCdSe/ZnTe/Si (211) Heterostructures</title><author>Vaghayenegar, M. ; Doyle, K. J. ; Trivedi, S. ; Wijewarnasuriya, P. ; Smith, David J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c316t-9de0f2b51333e3cc7eecd52ffd75317405b46ddf04e7a97df246ff81d543cff03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Burgers vector</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemical etching</topic><topic>Chemistry and Materials Science</topic><topic>Defects</topic><topic>Dislocations</topic><topic>Electronics and Microelectronics</topic><topic>Electrons</topic><topic>Epitaxial growth</topic><topic>Etch pits</topic><topic>Etchants</topic><topic>Heterostructures</topic><topic>Hydrochloric acid</topic><topic>Image analysis</topic><topic>Image resolution</topic><topic>Instrumentation</topic><topic>Lactic acid</topic><topic>Materials Science</topic><topic>Molecular beam epitaxy</topic><topic>Nitric acid</topic><topic>Optical and Electronic Materials</topic><topic>Organic chemistry</topic><topic>Solid State Physics</topic><topic>Stacking faults</topic><topic>Transmission electron microscopy</topic><topic>Zinc tellurides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Vaghayenegar, M.</creatorcontrib><creatorcontrib>Doyle, K. J.</creatorcontrib><creatorcontrib>Trivedi, S.</creatorcontrib><creatorcontrib>Wijewarnasuriya, P.</creatorcontrib><creatorcontrib>Smith, David J.</creatorcontrib><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>STEM Database</collection><collection>ProQuest Pharma Collection</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Research Library (Alumni Edition)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>Research Library Prep</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Research Library</collection><collection>Science Database</collection><collection>Engineering Database</collection><collection>Research Library (Corporate)</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>ProQuest Central Basic</collection><collection>SIRS Editorial</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Vaghayenegar, M.</au><au>Doyle, K. J.</au><au>Trivedi, S.</au><au>Wijewarnasuriya, P.</au><au>Smith, David J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Microstructural Characterization of Defects and Chemical Etching for HgCdSe/ZnTe/Si (211) Heterostructures</atitle><jtitle>Journal of electronic materials</jtitle><stitle>Journal of Elec Materi</stitle><date>2019-01-01</date><risdate>2019</risdate><volume>48</volume><issue>1</issue><spage>571</spage><epage>582</epage><pages>571-582</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><abstract>In this work, transmission electron microscopy has been used to investigate HgCdSe/ZnTe/Si (211) heterostructures grown by molecular beam epitaxy and to study the effects of chemical etchants for measurements of defect density in the HgCdSe epilayers. Both ZnTe/Si and HgCdSe/ZnTe interfaces were decorated with {111}-type stacking faults inclined at angles of ∼ 19° or ∼ 90° with respect to the interface plane. Similar stacking faults were also present in the upper regions of the HgCdSe films. High-resolution imaging and Fourier image analysis revealed dislocations, mostly with
a
3
1
¯
11
Burgers vector, at both ZnTe/Si and HgCdSe/ZnTe interfaces. Etching solutions based on different combinations of nitric acid, hydrochloric acid and lactic acid were tried in attempts to identify an etchant that provided one-to-one correspondence between etch pits and defects in the HgCdSe layer. Focused-ion-beam milling and transmission electron microscopy were used to prepare site-specific cross-section samples from across the etch pits. However, many defects in regions surrounding the etch pits were unaffected by the various different etchants.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11664-018-6737-0</doi><tpages>12</tpages></addata></record> |
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| subjects | Burgers vector Characterization and Evaluation of Materials Chemical etching Chemistry and Materials Science Defects Dislocations Electronics and Microelectronics Electrons Epitaxial growth Etch pits Etchants Heterostructures Hydrochloric acid Image analysis Image resolution Instrumentation Lactic acid Materials Science Molecular beam epitaxy Nitric acid Optical and Electronic Materials Organic chemistry Solid State Physics Stacking faults Transmission electron microscopy Zinc tellurides |
| title | Microstructural Characterization of Defects and Chemical Etching for HgCdSe/ZnTe/Si (211) Heterostructures |
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