Spin field-effect transistor in a quantum spin-Hall device
We discuss the transport properties of a quantum spin-Hall insulator with sizable Rashba spin-orbit coupling in a disk geometry. The presence of topologically protected helical edge states allows for the control and manipulation of spin polarized currents: When ferromagnetic leads are coupled to the...
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| Veröffentlicht in: | Physical review. B 2018-08, Vol.98 (7), p.075147, Article 075147 |
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| container_issue | 7 |
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| container_title | Physical review. B |
| container_volume | 98 |
| creator | Battilomo, Raffaele Scopigno, Niccoló Ortix, Carmine |
| description | We discuss the transport properties of a quantum spin-Hall insulator with sizable Rashba spin-orbit coupling in a disk geometry. The presence of topologically protected helical edge states allows for the control and manipulation of spin polarized currents: When ferromagnetic leads are coupled to the quantum spin-Hall device, the ballistic conductance is modulated by the Rashba strength. Therefore, by tuning the Rashba interaction via an all-electric gating, it is possible to control the spin polarization of injected electrons. |
| doi_str_mv | 10.1103/PhysRevB.98.075147 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 2469-9950 |
| ispartof | Physical review. B, 2018-08, Vol.98 (7), p.075147, Article 075147 |
| issn | 2469-9950 2469-9969 |
| language | eng |
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| source | American Physical Society Journals |
| subjects | Electron spin Ferromagnetism Field effect transistors Polarization (spin alignment) Resistance Semiconductor devices Spin-orbit interactions |
| title | Spin field-effect transistor in a quantum spin-Hall device |
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