Trap densities and transport properties of pentacene metal–oxide–semiconductor transistors: II—Numerical modeling of dc characteristics

A numerical procedure to calculate the drain-current (ID) vs. gate-voltage (VG) characteristics from numerical solutions of the Poisson equation for organic Thin-Film Transistors (TFTs) is presented. Polaron transport is modeled as two-dimensional charge transport in a semiconductor having free-carr...

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Veröffentlicht in:	Journal of applied physics 2014-06, Vol.115 (24)
Hauptverfasser:	Basile, A. F., Kyndiah, A., Biscarini, F., Fraboni, B.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Carrier density Charge transport Computer simulation Mathematical models Metal oxide semiconductors Poisson equation Polarons Semiconductor devices Substrates Temperature dependence Thin film transistors Transistors Two dimensional models
Online-Zugang:	Volltext
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