Intrinsic inhomogeneity in barrier height at monolayer graphene/SiC Schottky junction
Graphene interfaced with a semiconductor forms a Schottky junction with rectifying properties. The inherent spatial inhomogeneity due to the formation of ripples and ridges in graphene can lead to fluctuations in the Schottky barrier height (SBH). The non-ideal behavior of the temperature dependent...
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| Veröffentlicht in: | Applied physics letters 2014-07, Vol.105 (2) |
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| container_title | Applied physics letters |
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| creator | Tomer, D. Rajput, S. Hudy, L. J. Li, C. H. Li, L. |
| description | Graphene interfaced with a semiconductor forms a Schottky junction with rectifying properties. The inherent spatial inhomogeneity due to the formation of ripples and ridges in graphene can lead to fluctuations in the Schottky barrier height (SBH). The non-ideal behavior of the temperature dependent barrier height and ideality factor greater than 4 can be attributed to these spatial inhomogeneities. Assuming a Gaussian distribution of the barrier, mean SBHs of 1.30 ± 0.18 eV and 1.16 ± 0.16 eV are found for graphene/SiC junctions on the C- and Si-face, respectively. These findings reveal intrinsic spatial inhomogeneities in the SBHs in graphene based Schottky junctions. |
| doi_str_mv | 10.1063/1.4890405 |
| format | Article |
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J. ; Li, C. H. ; Li, L.</creator><creatorcontrib>Tomer, D. ; Rajput, S. ; Hudy, L. J. ; Li, C. H. ; Li, L.</creatorcontrib><description>Graphene interfaced with a semiconductor forms a Schottky junction with rectifying properties. The inherent spatial inhomogeneity due to the formation of ripples and ridges in graphene can lead to fluctuations in the Schottky barrier height (SBH). The non-ideal behavior of the temperature dependent barrier height and ideality factor greater than 4 can be attributed to these spatial inhomogeneities. Assuming a Gaussian distribution of the barrier, mean SBHs of 1.30 ± 0.18 eV and 1.16 ± 0.16 eV are found for graphene/SiC junctions on the C- and Si-face, respectively. These findings reveal intrinsic spatial inhomogeneities in the SBHs in graphene based Schottky junctions.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4890405</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Barriers ; Graphene ; Inhomogeneity ; Normal distribution ; Silicon carbide ; Temperature dependence ; Variation</subject><ispartof>Applied physics letters, 2014-07, Vol.105 (2)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c358t-b5a8099741b7a64140dcbcd36bdb9ca7654e8e6b5b875438dfc665e6e3e94d063</citedby><cites>FETCH-LOGICAL-c358t-b5a8099741b7a64140dcbcd36bdb9ca7654e8e6b5b875438dfc665e6e3e94d063</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,777,781,27905,27906</link.rule.ids></links><search><creatorcontrib>Tomer, D.</creatorcontrib><creatorcontrib>Rajput, S.</creatorcontrib><creatorcontrib>Hudy, L. J.</creatorcontrib><creatorcontrib>Li, C. H.</creatorcontrib><creatorcontrib>Li, L.</creatorcontrib><title>Intrinsic inhomogeneity in barrier height at monolayer graphene/SiC Schottky junction</title><title>Applied physics letters</title><description>Graphene interfaced with a semiconductor forms a Schottky junction with rectifying properties. The inherent spatial inhomogeneity due to the formation of ripples and ridges in graphene can lead to fluctuations in the Schottky barrier height (SBH). The non-ideal behavior of the temperature dependent barrier height and ideality factor greater than 4 can be attributed to these spatial inhomogeneities. Assuming a Gaussian distribution of the barrier, mean SBHs of 1.30 ± 0.18 eV and 1.16 ± 0.16 eV are found for graphene/SiC junctions on the C- and Si-face, respectively. These findings reveal intrinsic spatial inhomogeneities in the SBHs in graphene based Schottky junctions.</description><subject>Applied physics</subject><subject>Barriers</subject><subject>Graphene</subject><subject>Inhomogeneity</subject><subject>Normal distribution</subject><subject>Silicon carbide</subject><subject>Temperature dependence</subject><subject>Variation</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNotUMtuAiEAJE2b1Noe-gckPfWwCvJYODamDxOTHqxnAiy6WAULeNi_L0ZPk5lMZjIDwDNGE4w4meIJFRJRxG7ACKO2bQjG4haMEEKk4ZLhe_CQ865SNiNkBNaLUJIP2VvoQx8PceuC82WoDBqdkncJ9s5v-wJ1gYcY4l4PVdsmfeyrdbryc7iyfSzld4C7U7DFx_AI7jZ6n93TFcdg_fH-M_9qlt-fi_nbsrGEidIYpgWSsqXYtJpTTFFnje0IN52RVrecUSccN8yIllEiuo3lnDnuiJO0q3PH4OWSe0zx7-RyUbt4SqFWqhmecSaorDPH4PXisinmnNxGHZM_6DQojNT5NYXV9TXyD5ziX1U</recordid><startdate>20140714</startdate><enddate>20140714</enddate><creator>Tomer, D.</creator><creator>Rajput, S.</creator><creator>Hudy, L. J.</creator><creator>Li, C. H.</creator><creator>Li, L.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20140714</creationdate><title>Intrinsic inhomogeneity in barrier height at monolayer graphene/SiC Schottky junction</title><author>Tomer, D. ; Rajput, S. ; Hudy, L. J. ; Li, C. H. ; Li, L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c358t-b5a8099741b7a64140dcbcd36bdb9ca7654e8e6b5b875438dfc665e6e3e94d063</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Applied physics</topic><topic>Barriers</topic><topic>Graphene</topic><topic>Inhomogeneity</topic><topic>Normal distribution</topic><topic>Silicon carbide</topic><topic>Temperature dependence</topic><topic>Variation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tomer, D.</creatorcontrib><creatorcontrib>Rajput, S.</creatorcontrib><creatorcontrib>Hudy, L. J.</creatorcontrib><creatorcontrib>Li, C. H.</creatorcontrib><creatorcontrib>Li, L.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tomer, D.</au><au>Rajput, S.</au><au>Hudy, L. J.</au><au>Li, C. H.</au><au>Li, L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Intrinsic inhomogeneity in barrier height at monolayer graphene/SiC Schottky junction</atitle><jtitle>Applied physics letters</jtitle><date>2014-07-14</date><risdate>2014</risdate><volume>105</volume><issue>2</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Graphene interfaced with a semiconductor forms a Schottky junction with rectifying properties. The inherent spatial inhomogeneity due to the formation of ripples and ridges in graphene can lead to fluctuations in the Schottky barrier height (SBH). The non-ideal behavior of the temperature dependent barrier height and ideality factor greater than 4 can be attributed to these spatial inhomogeneities. Assuming a Gaussian distribution of the barrier, mean SBHs of 1.30 ± 0.18 eV and 1.16 ± 0.16 eV are found for graphene/SiC junctions on the C- and Si-face, respectively. These findings reveal intrinsic spatial inhomogeneities in the SBHs in graphene based Schottky junctions.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4890405</doi><oa>free_for_read</oa></addata></record> |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Barriers Graphene Inhomogeneity Normal distribution Silicon carbide Temperature dependence Variation |
| title | Intrinsic inhomogeneity in barrier height at monolayer graphene/SiC Schottky junction |
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