Direct observation of nanometer-scale strain field around CoSi2/Si interface using scanning moiré fringe imaging

We report the use of scanning moiré fringe (SMF) imaging through high-angle annular dark-field scanning transmission electron microscopy (STEM) to measure the strain field around a CoSi2 contact embedded in the source and drain (S/D) region of a transistor. The atomic arrangement of the CoSi2/Si (11...

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Veröffentlicht in:	Applied physics letters 2014-04, Vol.104 (16)
Hauptverfasser:	Kim, Suhyun, Jung, Younheum, Jung Kim, Joong, Byun, Gwangseon, Lee, Sunyoung, Lee, Haebum
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Cobalt silicide D region Image resolution Microscopes Moire fringes Scanning electron microscopy Scanning transmission electron microscopy Transmission electron microscopy
Online-Zugang:	Volltext
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