Submicron organic thin-film transistors fabricated by film profile engineering method
In this work, we explore and demonstrate the feasibility of a film profile engineering (FPE) concept in fabricating pentacene-based organic thin-film transistors (OTFTs) with submicron channel length. The FPE scheme utilizes a suspended bridge built on the wafer and the specific deposition condition...
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| Veröffentlicht in: | Applied physics letters 2014-07, Vol.105 (4) |
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| container_title | Applied physics letters |
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| creator | Wu, Ming-Hung Lin, Horng-Chih Lin, Hung-Cheng Zan, Hsiao-Wen Meng, Hsin-Fei Huang, Tiao-Yuan |
| description | In this work, we explore and demonstrate the feasibility of a film profile engineering (FPE) concept in fabricating pentacene-based organic thin-film transistors (OTFTs) with submicron channel length. The FPE scheme utilizes a suspended bridge built on the wafer and the specific deposition conditions to form thin films with desirable profiles. In order to form a continuous pentacene channel under the bridge, the background pressure of thermal evaporator is adjusted by pumping down the filling N2 to a specific level. The results show that, by setting the deposition pressure at 3 mtorr, functional operations of OTFTs with channel length ranging from 0.4 to 0.6 μm are obtained. |
| doi_str_mv | 10.1063/1.4892404 |
| format | Article |
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The FPE scheme utilizes a suspended bridge built on the wafer and the specific deposition conditions to form thin films with desirable profiles. In order to form a continuous pentacene channel under the bridge, the background pressure of thermal evaporator is adjusted by pumping down the filling N2 to a specific level. The results show that, by setting the deposition pressure at 3 mtorr, functional operations of OTFTs with channel length ranging from 0.4 to 0.6 μm are obtained.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4892404</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Deposition ; Evaporators ; Semiconductor devices ; Thin film transistors ; Transistors</subject><ispartof>Applied physics letters, 2014-07, Vol.105 (4)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c323t-f4efd9468cc4267657c30955e9b63a03e5b3e3c2af36c4ec54894093c50f71a83</citedby><cites>FETCH-LOGICAL-c323t-f4efd9468cc4267657c30955e9b63a03e5b3e3c2af36c4ec54894093c50f71a83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Wu, Ming-Hung</creatorcontrib><creatorcontrib>Lin, Horng-Chih</creatorcontrib><creatorcontrib>Lin, Hung-Cheng</creatorcontrib><creatorcontrib>Zan, Hsiao-Wen</creatorcontrib><creatorcontrib>Meng, Hsin-Fei</creatorcontrib><creatorcontrib>Huang, Tiao-Yuan</creatorcontrib><title>Submicron organic thin-film transistors fabricated by film profile engineering method</title><title>Applied physics letters</title><description>In this work, we explore and demonstrate the feasibility of a film profile engineering (FPE) concept in fabricating pentacene-based organic thin-film transistors (OTFTs) with submicron channel length. The FPE scheme utilizes a suspended bridge built on the wafer and the specific deposition conditions to form thin films with desirable profiles. In order to form a continuous pentacene channel under the bridge, the background pressure of thermal evaporator is adjusted by pumping down the filling N2 to a specific level. The results show that, by setting the deposition pressure at 3 mtorr, functional operations of OTFTs with channel length ranging from 0.4 to 0.6 μm are obtained.</description><subject>Applied physics</subject><subject>Deposition</subject><subject>Evaporators</subject><subject>Semiconductor devices</subject><subject>Thin film transistors</subject><subject>Transistors</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNotUE1PAyEUJEYTa_XgPyDx5GEr8IBdjqbxK2niQXsmLIWWpstWoIf-e9H2NJm8ycybQeiekhklEp7ojHeKccIv0ISStm2A0u4STQgh0Egl6DW6yXlbqWAAE7T8OvRDsGmMeExrE4PFZRNi48NuwCWZmEMuY8rYmz4Fa4pb4f6I_8_7NFZ02MV1iM6lENd4cGUzrm7RlTe77O7OOEXL15fv-Xuz-Hz7mD8vGgsMSuO58yvFZWctZ7KVorVAlBBO9RIMASd6cGCZ8SAtd1bUbpwosIL4lpoOpujh5Ftf-Tm4XPR2PKRYIzWjrPqxTqqqejypas2ck_N6n8Jg0lFTov9W01SfV4NfeXte3w</recordid><startdate>20140728</startdate><enddate>20140728</enddate><creator>Wu, Ming-Hung</creator><creator>Lin, Horng-Chih</creator><creator>Lin, Hung-Cheng</creator><creator>Zan, Hsiao-Wen</creator><creator>Meng, Hsin-Fei</creator><creator>Huang, Tiao-Yuan</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20140728</creationdate><title>Submicron organic thin-film transistors fabricated by film profile engineering method</title><author>Wu, Ming-Hung ; Lin, Horng-Chih ; Lin, Hung-Cheng ; Zan, Hsiao-Wen ; Meng, Hsin-Fei ; Huang, Tiao-Yuan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c323t-f4efd9468cc4267657c30955e9b63a03e5b3e3c2af36c4ec54894093c50f71a83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Applied physics</topic><topic>Deposition</topic><topic>Evaporators</topic><topic>Semiconductor devices</topic><topic>Thin film transistors</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wu, Ming-Hung</creatorcontrib><creatorcontrib>Lin, Horng-Chih</creatorcontrib><creatorcontrib>Lin, Hung-Cheng</creatorcontrib><creatorcontrib>Zan, Hsiao-Wen</creatorcontrib><creatorcontrib>Meng, Hsin-Fei</creatorcontrib><creatorcontrib>Huang, Tiao-Yuan</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wu, Ming-Hung</au><au>Lin, Horng-Chih</au><au>Lin, Hung-Cheng</au><au>Zan, Hsiao-Wen</au><au>Meng, Hsin-Fei</au><au>Huang, Tiao-Yuan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Submicron organic thin-film transistors fabricated by film profile engineering method</atitle><jtitle>Applied physics letters</jtitle><date>2014-07-28</date><risdate>2014</risdate><volume>105</volume><issue>4</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>In this work, we explore and demonstrate the feasibility of a film profile engineering (FPE) concept in fabricating pentacene-based organic thin-film transistors (OTFTs) with submicron channel length. 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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Deposition Evaporators Semiconductor devices Thin film transistors Transistors |
| title | Submicron organic thin-film transistors fabricated by film profile engineering method |
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