Over 7% magnetic field-induced strain in a Ni-Mn-Ga five-layered martensite

Over 7% magnetic field-induced strain in a Ni-Mn-Ga five-layered martensite

A Ni-Mn-Ga single crystal with a modulated five-layered martensite structure is reported, demonstrating giant magnetic field induced strain (MFIS) of 7.1% at room temperature and of 6% at temperatures close to the austenite transformation (TA = 71 °C). The room temperature MFIS clearly exceeds the b...

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Veröffentlicht in:Applied physics letters 2014-08, Vol.105 (5)
Hauptverfasser: Pagounis, E., Chulist, R., Szczerba, M. J., Laufenberg, M.
Format: Artikel
Sprache:eng
Schlagworte:
Applied physics
Crystal structure
Magnetic fields
Manganese
Martensite
Martensitic transformations
Nickel
Shape memory
Single crystals
Temperature
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Zusammenfassung:A Ni-Mn-Ga single crystal with a modulated five-layered martensite structure is reported, demonstrating giant magnetic field induced strain (MFIS) of 7.1% at room temperature and of 6% at temperatures close to the austenite transformation (TA = 71 °C). The room temperature MFIS clearly exceeds the best results of around 6% measured earlier in 10M martensites. The larger MFIS is connected to the huge (>1%) change in the lattice distortion of the 10M structure, obtained within a narrow temperature interval of 47 K, which has been previously observed only during intermartensitic transformation. The present material shall effectively reduce the size of magnetic shape memory actuators.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4892633