Modeling of hysteretic Schottky diode-like conduction in Pt/BiFeO3/SrRuO3 switches

The hysteresis current-voltage (I-V) loops in Pt/BiFeO3/SrRuO3 structures are simulated using a Schottky diode-like conduction model with sigmoidally varying parameters, including series resistance correction and barrier lowering. The evolution of the system is represented by a vector in a 3D parame...

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Veröffentlicht in:	Applied physics letters 2014-08, Vol.105 (8)
Hauptverfasser:	Miranda, E., Jiménez, D., Tsurumaki-Fukuchi, A., Blasco, J., Yamada, H., Suñé, J., Sawa, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Bismuth ferrite Computer simulation Conduction model Diodes Hysteresis Mathematical models P-type semiconductors Parameters Schottky diodes Switches Voltage drop
Online-Zugang:	Volltext
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