Selective area growth of GaN nanostructures: A key to produce high quality (11–20) a-plane pseudo-substrates
Selective area growth of GaN nanostructures was performed on (11-20) a-plane GaN/sapphire templates. The dominant lateral growth rate along the in-plane c-direction produces the coalescence of the individual nanostructures into a continuous film. Photoluminescence measurements show the appearance of...
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| Veröffentlicht in: | Applied physics letters 2014-09, Vol.105 (9) |
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| container_title | Applied physics letters |
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| creator | Albert, S. Bengoechea-Encabo, A. Zuniga-Perez, J. de Mierry, P. Val, P. Sanchez-Garcia, M. A. Calleja, E. |
| description | Selective area growth of GaN nanostructures was performed on (11-20) a-plane GaN/sapphire templates. The dominant lateral growth rate along the in-plane c-direction produces the coalescence of the individual nanostructures into a continuous film. Photoluminescence measurements show the appearance of donor-bound and free exciton emissions in individual nanostructures, pointing towards an improvement of the material quality as compared to the original template. Upon nanostructures coalescence a decrease of the full width half maximum value, down to 2 meV, is observed. These results reveal the high quality of the coalesced film, opening the way to fabricate high quality, non-polar GaN pseudo-substrates. |
| doi_str_mv | 10.1063/1.4894802 |
| format | Article |
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A. ; Calleja, E.</creator><creatorcontrib>Albert, S. ; Bengoechea-Encabo, A. ; Zuniga-Perez, J. ; de Mierry, P. ; Val, P. ; Sanchez-Garcia, M. A. ; Calleja, E.</creatorcontrib><description>Selective area growth of GaN nanostructures was performed on (11-20) a-plane GaN/sapphire templates. The dominant lateral growth rate along the in-plane c-direction produces the coalescence of the individual nanostructures into a continuous film. Photoluminescence measurements show the appearance of donor-bound and free exciton emissions in individual nanostructures, pointing towards an improvement of the material quality as compared to the original template. Upon nanostructures coalescence a decrease of the full width half maximum value, down to 2 meV, is observed. These results reveal the high quality of the coalesced film, opening the way to fabricate high quality, non-polar GaN pseudo-substrates.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4894802</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Coalescing ; Gallium nitrides ; Nanostructure ; Photoluminescence ; Sapphire ; Substrates</subject><ispartof>Applied physics letters, 2014-09, Vol.105 (9)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c323t-b8fb1e8510169bc5997da51663a6fe1632655dc110ad938914e31bd15f2b1c2f3</citedby><cites>FETCH-LOGICAL-c323t-b8fb1e8510169bc5997da51663a6fe1632655dc110ad938914e31bd15f2b1c2f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Albert, S.</creatorcontrib><creatorcontrib>Bengoechea-Encabo, A.</creatorcontrib><creatorcontrib>Zuniga-Perez, J.</creatorcontrib><creatorcontrib>de Mierry, P.</creatorcontrib><creatorcontrib>Val, P.</creatorcontrib><creatorcontrib>Sanchez-Garcia, M. A.</creatorcontrib><creatorcontrib>Calleja, E.</creatorcontrib><title>Selective area growth of GaN nanostructures: A key to produce high quality (11–20) a-plane pseudo-substrates</title><title>Applied physics letters</title><description>Selective area growth of GaN nanostructures was performed on (11-20) a-plane GaN/sapphire templates. The dominant lateral growth rate along the in-plane c-direction produces the coalescence of the individual nanostructures into a continuous film. Photoluminescence measurements show the appearance of donor-bound and free exciton emissions in individual nanostructures, pointing towards an improvement of the material quality as compared to the original template. Upon nanostructures coalescence a decrease of the full width half maximum value, down to 2 meV, is observed. These results reveal the high quality of the coalesced film, opening the way to fabricate high quality, non-polar GaN pseudo-substrates.</description><subject>Applied physics</subject><subject>Coalescing</subject><subject>Gallium nitrides</subject><subject>Nanostructure</subject><subject>Photoluminescence</subject><subject>Sapphire</subject><subject>Substrates</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNotUL1OwzAYtBBIlMLAG1hioUOKP7t2bbaqgoJUwQDMkeM4bUqIU_-AuvEOvCFPQio6nU66Px1Cl0DGQAS7gfFEqokk9AgNgEynGQOQx2hACGGZUBxO0VkIm55yytgAtS-2sSbWnxZrbzVeefcV19hVeKGfcKtbF6JPJiZvwy2e4Xe7w9HhzrsyGYvX9WqNt0k3ddzha4Df7x9KRlhnXaNbi7tgU-mykIo-RUcbztFJpZtgLw44RG_3d6_zh2z5vHicz5aZYZTFrJBVAVZyICBUYbhS01JzEIJpUVkQjArOSwNAdKmYVDCxDIoSeEULMLRiQ3T1n9sP3SYbYr5xybd9ZU5hb5ZS8V41-lcZ70Lwtso7X39ov8uB5Ps7c8gPd7I_dixmwg</recordid><startdate>20140901</startdate><enddate>20140901</enddate><creator>Albert, S.</creator><creator>Bengoechea-Encabo, A.</creator><creator>Zuniga-Perez, J.</creator><creator>de Mierry, P.</creator><creator>Val, P.</creator><creator>Sanchez-Garcia, M. 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These results reveal the high quality of the coalesced film, opening the way to fabricate high quality, non-polar GaN pseudo-substrates.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4894802</doi></addata></record> |
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| language | eng |
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| source | American Institute of Physics; Alma/SFX Local Collection |
| subjects | Applied physics Coalescing Gallium nitrides Nanostructure Photoluminescence Sapphire Substrates |
| title | Selective area growth of GaN nanostructures: A key to produce high quality (11–20) a-plane pseudo-substrates |
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