Fabrication and characterization of germanium-on-insulator through epitaxy, bonding, and layer transfer

A scalable method to fabricate germanium on insulator (GOI) substrate through epitaxy, bonding, and layer transfer is reported. The germanium (Ge) epitaxial film is grown directly on a silicon (Si) (001) donor wafer using a “three-step growth” approach in a reduced pressure chemical vapour depositio...

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Veröffentlicht in:	Journal of applied physics 2014-09, Vol.116 (10)
Hauptverfasser:	Lee, Kwang Hong, Bao, Shuyu, Chong, Gang Yih, Tan, Yew Heng, Fitzgerald, Eugene A., Tan, Chuan Seng
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Chemical vapor deposition Chemical-mechanical polishing Dislocation density Epitaxial growth Germanium Misfit dislocations Organic chemistry Silicon Substrates Surface roughness Tensile strain Threading dislocations
Online-Zugang:	Volltext
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