Room temperature photoluminescence from InxAl(1−x)N films deposited by plasma-assisted molecular beam epitaxy

InAlN films deposited by plasma-assisted molecular beam epitaxy exhibited a lateral composition modulation characterized by 10–12 nm diameter, honeycomb-shaped, columnar domains with Al-rich cores and In-rich boundaries. To ascertain the effect of this microstructure on its optical properties, room...

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Veröffentlicht in:Applied physics letters 2014-09, Vol.105 (13)
Hauptverfasser: Kong, W., Mohanta, A., Roberts, A. T., Jiao, W. Y., Fournelle, J., Kim, T. H., Losurdo, M., Everitt, H. O., Brown, A. S.
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container_issue 13
container_start_page
container_title Applied physics letters
container_volume 105
creator Kong, W.
Mohanta, A.
Roberts, A. T.
Jiao, W. Y.
Fournelle, J.
Kim, T. H.
Losurdo, M.
Everitt, H. O.
Brown, A. S.
description InAlN films deposited by plasma-assisted molecular beam epitaxy exhibited a lateral composition modulation characterized by 10–12 nm diameter, honeycomb-shaped, columnar domains with Al-rich cores and In-rich boundaries. To ascertain the effect of this microstructure on its optical properties, room temperature absorption and photoluminescence characteristics of InxAl(1−x)N were comparatively investigated for indium compositions ranging from x = 0.092 to 0.235, including x = 0.166 lattice matched to GaN. The Stokes shift of the emission was significantly greater than reported for films grown by metalorganic chemical vapor deposition, possibly due to the phase separation in these nanocolumnar domains. The room temperature photoluminescence also provided evidence of carrier transfer from the InAlN film to the GaN template.
doi_str_mv 10.1063/1.4896849
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source AIP Journals; Alma/SFX Local Collection
subjects Applied physics
Composition
Domains
Honeycomb construction
Lattice matching
Metalorganic chemical vapor deposition
Molecular beam epitaxy
Optical properties
Organic chemistry
Phase separation
Photoluminescence
Room temperature
title Room temperature photoluminescence from InxAl(1−x)N films deposited by plasma-assisted molecular beam epitaxy
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