Room temperature photoluminescence from InxAl(1−x)N films deposited by plasma-assisted molecular beam epitaxy
InAlN films deposited by plasma-assisted molecular beam epitaxy exhibited a lateral composition modulation characterized by 10–12 nm diameter, honeycomb-shaped, columnar domains with Al-rich cores and In-rich boundaries. To ascertain the effect of this microstructure on its optical properties, room...
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Veröffentlicht in: | Applied physics letters 2014-09, Vol.105 (13) |
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creator | Kong, W. Mohanta, A. Roberts, A. T. Jiao, W. Y. Fournelle, J. Kim, T. H. Losurdo, M. Everitt, H. O. Brown, A. S. |
description | InAlN films deposited by plasma-assisted molecular beam epitaxy exhibited a lateral composition modulation characterized by 10–12 nm diameter, honeycomb-shaped, columnar domains with Al-rich cores and In-rich boundaries. To ascertain the effect of this microstructure on its optical properties, room temperature absorption and photoluminescence characteristics of InxAl(1−x)N were comparatively investigated for indium compositions ranging from x = 0.092 to 0.235, including x = 0.166 lattice matched to GaN. The Stokes shift of the emission was significantly greater than reported for films grown by metalorganic chemical vapor deposition, possibly due to the phase separation in these nanocolumnar domains. The room temperature photoluminescence also provided evidence of carrier transfer from the InAlN film to the GaN template. |
doi_str_mv | 10.1063/1.4896849 |
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T. ; Jiao, W. Y. ; Fournelle, J. ; Kim, T. H. ; Losurdo, M. ; Everitt, H. O. ; Brown, A. S.</creator><creatorcontrib>Kong, W. ; Mohanta, A. ; Roberts, A. T. ; Jiao, W. Y. ; Fournelle, J. ; Kim, T. H. ; Losurdo, M. ; Everitt, H. O. ; Brown, A. S.</creatorcontrib><description>InAlN films deposited by plasma-assisted molecular beam epitaxy exhibited a lateral composition modulation characterized by 10–12 nm diameter, honeycomb-shaped, columnar domains with Al-rich cores and In-rich boundaries. To ascertain the effect of this microstructure on its optical properties, room temperature absorption and photoluminescence characteristics of InxAl(1−x)N were comparatively investigated for indium compositions ranging from x = 0.092 to 0.235, including x = 0.166 lattice matched to GaN. The Stokes shift of the emission was significantly greater than reported for films grown by metalorganic chemical vapor deposition, possibly due to the phase separation in these nanocolumnar domains. The room temperature photoluminescence also provided evidence of carrier transfer from the InAlN film to the GaN template.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4896849</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Composition ; Domains ; Honeycomb construction ; Lattice matching ; Metalorganic chemical vapor deposition ; Molecular beam epitaxy ; Optical properties ; Organic chemistry ; Phase separation ; Photoluminescence ; Room temperature</subject><ispartof>Applied physics letters, 2014-09, Vol.105 (13)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c292t-66607fd465530c11f443a02254bded3c96db34cd6320565e39df5d808e7966423</citedby><cites>FETCH-LOGICAL-c292t-66607fd465530c11f443a02254bded3c96db34cd6320565e39df5d808e7966423</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,781,785,27928,27929</link.rule.ids></links><search><creatorcontrib>Kong, W.</creatorcontrib><creatorcontrib>Mohanta, A.</creatorcontrib><creatorcontrib>Roberts, A. 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The Stokes shift of the emission was significantly greater than reported for films grown by metalorganic chemical vapor deposition, possibly due to the phase separation in these nanocolumnar domains. The room temperature photoluminescence also provided evidence of carrier transfer from the InAlN film to the GaN template.</description><subject>Applied physics</subject><subject>Composition</subject><subject>Domains</subject><subject>Honeycomb construction</subject><subject>Lattice matching</subject><subject>Metalorganic chemical vapor deposition</subject><subject>Molecular beam epitaxy</subject><subject>Optical properties</subject><subject>Organic chemistry</subject><subject>Phase separation</subject><subject>Photoluminescence</subject><subject>Room temperature</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNotkM1Kw0AcxBdRsFYPvsGCF3tI3e8kx1L8KBQF0XPY7P6DKdls3E0gfQPPPqJPYkp7Gmb4MQOD0C0lS0oUf6BLkeUqE_kZmlGSpgmnNDtHM0IIT1Qu6SW6inE3Wck4nyH_7r3DPbgOgu6HALj78r1vBle3EA20BnAVJmTTjqvmnv79_I6LV1zVjYvYQudj3YPF5R53jY5OJzrGOh4i5xswQ6MDLkE7DF3d63F_jS4q3US4OekcfT49fqxfku3b82a92iaG5axPlFIkraxQUnJiKK2E4JowJkVpwXKTK1tyYazijEglgee2kjYjGaS5UoLxObo79nbBfw8Q-2Lnh9BOkwWjbKqlGRETtThSJvgYA1RFF2qnw76gpDj8WdDi9Cf_B78kaKo</recordid><startdate>20140929</startdate><enddate>20140929</enddate><creator>Kong, W.</creator><creator>Mohanta, A.</creator><creator>Roberts, A. 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H.</creatorcontrib><creatorcontrib>Losurdo, M.</creatorcontrib><creatorcontrib>Everitt, H. O.</creatorcontrib><creatorcontrib>Brown, A. S.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kong, W.</au><au>Mohanta, A.</au><au>Roberts, A. T.</au><au>Jiao, W. Y.</au><au>Fournelle, J.</au><au>Kim, T. H.</au><au>Losurdo, M.</au><au>Everitt, H. O.</au><au>Brown, A. S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Room temperature photoluminescence from InxAl(1−x)N films deposited by plasma-assisted molecular beam epitaxy</atitle><jtitle>Applied physics letters</jtitle><date>2014-09-29</date><risdate>2014</risdate><volume>105</volume><issue>13</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>InAlN films deposited by plasma-assisted molecular beam epitaxy exhibited a lateral composition modulation characterized by 10–12 nm diameter, honeycomb-shaped, columnar domains with Al-rich cores and In-rich boundaries. To ascertain the effect of this microstructure on its optical properties, room temperature absorption and photoluminescence characteristics of InxAl(1−x)N were comparatively investigated for indium compositions ranging from x = 0.092 to 0.235, including x = 0.166 lattice matched to GaN. The Stokes shift of the emission was significantly greater than reported for films grown by metalorganic chemical vapor deposition, possibly due to the phase separation in these nanocolumnar domains. The room temperature photoluminescence also provided evidence of carrier transfer from the InAlN film to the GaN template.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4896849</doi><oa>free_for_read</oa></addata></record> |
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subjects | Applied physics Composition Domains Honeycomb construction Lattice matching Metalorganic chemical vapor deposition Molecular beam epitaxy Optical properties Organic chemistry Phase separation Photoluminescence Room temperature |
title | Room temperature photoluminescence from InxAl(1−x)N films deposited by plasma-assisted molecular beam epitaxy |
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