Roughness analysis in strained silicon-on-insulator wires and films
Strained silicon is used to enhance performance in state-of-the-art CMOS. Under device operating conditions, the effect of strain is to reduce the carrier scattering at the channel by a smoother semiconductor surface. This has never been completely understood. This paper gives first evidence of the...
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Veröffentlicht in: | Journal of applied physics 2014-09, Vol.116 (12) |
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creator | Ureña, Ferran Olsen, Sarah H. Escobedo-Cousin, Enrique Minamisawa, Renato A. Raskin, Jean-Pierre |
description | Strained silicon is used to enhance performance in state-of-the-art CMOS. Under device operating conditions, the effect of strain is to reduce the carrier scattering at the channel by a smoother semiconductor surface. This has never been completely understood. This paper gives first evidence of the variation in surface roughness under realistic strained conditions. At the nanoscale, the SiO2/Si interface roughness is dependent on the scale of observation (self-affinity). To date, there is no experimental study of the SiO2/Si interface roughness scaling with strain. This work presents the effect of uniaxial and biaxial strains on the surface roughness of strained silicon-on-insulator films and wires using atomic force microscopy. Levels of strain ranging from 0% to 2.3%, encompassing those used in present CMOS devices have been investigated. It is shown that the silicon surface is affected by uniaxial and biaxial strains differently. Three surface roughness parameters have been analyzed: root mean square roughness, correlation length, and the Hurst exponent, which is used to describe the scaling behavior of a self-affine surface. The results show that the root mean square roughness decreases (up to ∼40%) with increasing tensile strain, whereas the correlation length increases (up to ∼63 nm/%) with increasing tensile strain. The Hurst exponent also varies with strain and with the undulation wavelength regime (between ∼0.8 and 0.2). This dependency explains why some models used to determine the carrier mobility from experiments fit the data better with a Gaussian form, whereas other models fit the data better with an exponential form. |
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Under device operating conditions, the effect of strain is to reduce the carrier scattering at the channel by a smoother semiconductor surface. This has never been completely understood. This paper gives first evidence of the variation in surface roughness under realistic strained conditions. At the nanoscale, the SiO2/Si interface roughness is dependent on the scale of observation (self-affinity). To date, there is no experimental study of the SiO2/Si interface roughness scaling with strain. This work presents the effect of uniaxial and biaxial strains on the surface roughness of strained silicon-on-insulator films and wires using atomic force microscopy. Levels of strain ranging from 0% to 2.3%, encompassing those used in present CMOS devices have been investigated. It is shown that the silicon surface is affected by uniaxial and biaxial strains differently. Three surface roughness parameters have been analyzed: root mean square roughness, correlation length, and the Hurst exponent, which is used to describe the scaling behavior of a self-affine surface. The results show that the root mean square roughness decreases (up to ∼40%) with increasing tensile strain, whereas the correlation length increases (up to ∼63 nm/%) with increasing tensile strain. The Hurst exponent also varies with strain and with the undulation wavelength regime (between ∼0.8 and 0.2). This dependency explains why some models used to determine the carrier mobility from experiments fit the data better with a Gaussian form, whereas other models fit the data better with an exponential form.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4896301</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Atomic force microscopy ; Carrier mobility ; CMOS ; Correlation analysis ; Dependence ; Fractals ; Interface roughness ; Scaling ; Silicon ; Silicon dioxide ; State of the art ; Surface roughness ; Tensile strain</subject><ispartof>Journal of applied physics, 2014-09, Vol.116 (12)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c257t-a2bd369188cfe344aad5935d9db1daa43395578d79eaf961f15c9483ddd868033</citedby><cites>FETCH-LOGICAL-c257t-a2bd369188cfe344aad5935d9db1daa43395578d79eaf961f15c9483ddd868033</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Ureña, Ferran</creatorcontrib><creatorcontrib>Olsen, Sarah H.</creatorcontrib><creatorcontrib>Escobedo-Cousin, Enrique</creatorcontrib><creatorcontrib>Minamisawa, Renato A.</creatorcontrib><creatorcontrib>Raskin, Jean-Pierre</creatorcontrib><title>Roughness analysis in strained silicon-on-insulator wires and films</title><title>Journal of applied physics</title><description>Strained silicon is used to enhance performance in state-of-the-art CMOS. Under device operating conditions, the effect of strain is to reduce the carrier scattering at the channel by a smoother semiconductor surface. This has never been completely understood. This paper gives first evidence of the variation in surface roughness under realistic strained conditions. At the nanoscale, the SiO2/Si interface roughness is dependent on the scale of observation (self-affinity). To date, there is no experimental study of the SiO2/Si interface roughness scaling with strain. This work presents the effect of uniaxial and biaxial strains on the surface roughness of strained silicon-on-insulator films and wires using atomic force microscopy. Levels of strain ranging from 0% to 2.3%, encompassing those used in present CMOS devices have been investigated. It is shown that the silicon surface is affected by uniaxial and biaxial strains differently. Three surface roughness parameters have been analyzed: root mean square roughness, correlation length, and the Hurst exponent, which is used to describe the scaling behavior of a self-affine surface. The results show that the root mean square roughness decreases (up to ∼40%) with increasing tensile strain, whereas the correlation length increases (up to ∼63 nm/%) with increasing tensile strain. The Hurst exponent also varies with strain and with the undulation wavelength regime (between ∼0.8 and 0.2). This dependency explains why some models used to determine the carrier mobility from experiments fit the data better with a Gaussian form, whereas other models fit the data better with an exponential form.</description><subject>Applied physics</subject><subject>Atomic force microscopy</subject><subject>Carrier mobility</subject><subject>CMOS</subject><subject>Correlation analysis</subject><subject>Dependence</subject><subject>Fractals</subject><subject>Interface roughness</subject><subject>Scaling</subject><subject>Silicon</subject><subject>Silicon dioxide</subject><subject>State of the art</subject><subject>Surface roughness</subject><subject>Tensile strain</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNotkE1LxDAURYMoWEcX_oOCKxcd85qkzVtK8QsGBNF1yDSJZui0Y16LzL93ygxcuJvD5XIYuwW-BF6JB1hKjZXgcMYy4BqLWil-zjLOSyg01njJrog2nANogRlrPobp-6f3RLntbbenSHnscxqTjb13OcUutkNfHBJ7mjo7Din_i8nPvMtD7LZ0zS6C7cjfnHrBvp6fPpvXYvX-8tY8roq2VPVY2HLtRIWgdRu8kNJap1Aoh24NzlopBCpVa1ejtwErCKBalFo453SluRALdnfc3aXhd_I0ms0wpcNrMiWUlZIIaqbuj1SbBqLkg9mluLVpb4Cb2ZEBc3Ik_gH_IVh1</recordid><startdate>20140928</startdate><enddate>20140928</enddate><creator>Ureña, Ferran</creator><creator>Olsen, Sarah H.</creator><creator>Escobedo-Cousin, Enrique</creator><creator>Minamisawa, Renato A.</creator><creator>Raskin, Jean-Pierre</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20140928</creationdate><title>Roughness analysis in strained silicon-on-insulator wires and films</title><author>Ureña, Ferran ; Olsen, Sarah H. ; Escobedo-Cousin, Enrique ; Minamisawa, Renato A. ; Raskin, Jean-Pierre</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c257t-a2bd369188cfe344aad5935d9db1daa43395578d79eaf961f15c9483ddd868033</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Applied physics</topic><topic>Atomic force microscopy</topic><topic>Carrier mobility</topic><topic>CMOS</topic><topic>Correlation analysis</topic><topic>Dependence</topic><topic>Fractals</topic><topic>Interface roughness</topic><topic>Scaling</topic><topic>Silicon</topic><topic>Silicon dioxide</topic><topic>State of the art</topic><topic>Surface roughness</topic><topic>Tensile strain</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ureña, Ferran</creatorcontrib><creatorcontrib>Olsen, Sarah H.</creatorcontrib><creatorcontrib>Escobedo-Cousin, Enrique</creatorcontrib><creatorcontrib>Minamisawa, Renato A.</creatorcontrib><creatorcontrib>Raskin, Jean-Pierre</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ureña, Ferran</au><au>Olsen, Sarah H.</au><au>Escobedo-Cousin, Enrique</au><au>Minamisawa, Renato A.</au><au>Raskin, Jean-Pierre</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Roughness analysis in strained silicon-on-insulator wires and films</atitle><jtitle>Journal of applied physics</jtitle><date>2014-09-28</date><risdate>2014</risdate><volume>116</volume><issue>12</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>Strained silicon is used to enhance performance in state-of-the-art CMOS. Under device operating conditions, the effect of strain is to reduce the carrier scattering at the channel by a smoother semiconductor surface. This has never been completely understood. This paper gives first evidence of the variation in surface roughness under realistic strained conditions. At the nanoscale, the SiO2/Si interface roughness is dependent on the scale of observation (self-affinity). To date, there is no experimental study of the SiO2/Si interface roughness scaling with strain. This work presents the effect of uniaxial and biaxial strains on the surface roughness of strained silicon-on-insulator films and wires using atomic force microscopy. Levels of strain ranging from 0% to 2.3%, encompassing those used in present CMOS devices have been investigated. It is shown that the silicon surface is affected by uniaxial and biaxial strains differently. Three surface roughness parameters have been analyzed: root mean square roughness, correlation length, and the Hurst exponent, which is used to describe the scaling behavior of a self-affine surface. The results show that the root mean square roughness decreases (up to ∼40%) with increasing tensile strain, whereas the correlation length increases (up to ∼63 nm/%) with increasing tensile strain. The Hurst exponent also varies with strain and with the undulation wavelength regime (between ∼0.8 and 0.2). This dependency explains why some models used to determine the carrier mobility from experiments fit the data better with a Gaussian form, whereas other models fit the data better with an exponential form.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4896301</doi></addata></record> |
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subjects | Applied physics Atomic force microscopy Carrier mobility CMOS Correlation analysis Dependence Fractals Interface roughness Scaling Silicon Silicon dioxide State of the art Surface roughness Tensile strain |
title | Roughness analysis in strained silicon-on-insulator wires and films |
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