Fluoropolymer coatings for improved carbon nanotube transistor device and circuit performance
We report on the marked improvements in key device characteristics of single walled carbon nanotube (SWCNT) field-effect transistors (FETs) by coating the active semiconductor with a fluoropolymer layer such as poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE). The observed improvements includ...
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| Veröffentlicht in: | Applied physics letters 2014-09, Vol.105 (12) |
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| container_issue | 12 |
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| container_title | Applied physics letters |
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| creator | Jang, Seonpil Kim, Bongjun Geier, Michael L. Prabhumirashi, Pradyumna L. Hersam, Mark C. Dodabalapur, Ananth |
| description | We report on the marked improvements in key device characteristics of single walled carbon nanotube (SWCNT) field-effect transistors (FETs) by coating the active semiconductor with a fluoropolymer layer such as poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE). The observed improvements include: (i) A reduction in off-current by about an order of magnitude, (ii) a significant reduction in the variation of threshold voltage, and (iii) a reduction in bias stress-related instability and hysteresis present in device characteristics. These favorable changes in device characteristics also enhance circuit performance and the oscillation amplitude, oscillation frequency, and increase the yield of printed complementary 5-stage ring oscillators. The origins of these improvements are explored by exposing SWCNT FETs to a number of vapor phase polar molecules which produce similar effects on the FET characteristics as the PVDF-TrFE. Coating of the active SWCNT semiconductor layer with a fluoropolymer will be advantageous for the adoption of SWCNT FETs in a variety of printed electronics applications. |
| doi_str_mv | 10.1063/1.4895069 |
| format | Article |
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The observed improvements include: (i) A reduction in off-current by about an order of magnitude, (ii) a significant reduction in the variation of threshold voltage, and (iii) a reduction in bias stress-related instability and hysteresis present in device characteristics. These favorable changes in device characteristics also enhance circuit performance and the oscillation amplitude, oscillation frequency, and increase the yield of printed complementary 5-stage ring oscillators. The origins of these improvements are explored by exposing SWCNT FETs to a number of vapor phase polar molecules which produce similar effects on the FET characteristics as the PVDF-TrFE. Coating of the active SWCNT semiconductor layer with a fluoropolymer will be advantageous for the adoption of SWCNT FETs in a variety of printed electronics applications.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4895069</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Coating effects ; Field effect transistors ; Fluoropolymers ; Oscillators ; Reduction ; Semiconductor devices ; Single wall carbon nanotubes ; Stability ; Threshold voltage ; Vapor phases ; Vinylidene ; Vinylidene fluoride</subject><ispartof>Applied physics letters, 2014-09, Vol.105 (12)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c323t-3193217fbb0f1ebd56229f133f36607e488daf31856664f6ba986d9266ff707b3</citedby><cites>FETCH-LOGICAL-c323t-3193217fbb0f1ebd56229f133f36607e488daf31856664f6ba986d9266ff707b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Jang, Seonpil</creatorcontrib><creatorcontrib>Kim, Bongjun</creatorcontrib><creatorcontrib>Geier, Michael L.</creatorcontrib><creatorcontrib>Prabhumirashi, Pradyumna L.</creatorcontrib><creatorcontrib>Hersam, Mark C.</creatorcontrib><creatorcontrib>Dodabalapur, Ananth</creatorcontrib><title>Fluoropolymer coatings for improved carbon nanotube transistor device and circuit performance</title><title>Applied physics letters</title><description>We report on the marked improvements in key device characteristics of single walled carbon nanotube (SWCNT) field-effect transistors (FETs) by coating the active semiconductor with a fluoropolymer layer such as poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE). The observed improvements include: (i) A reduction in off-current by about an order of magnitude, (ii) a significant reduction in the variation of threshold voltage, and (iii) a reduction in bias stress-related instability and hysteresis present in device characteristics. These favorable changes in device characteristics also enhance circuit performance and the oscillation amplitude, oscillation frequency, and increase the yield of printed complementary 5-stage ring oscillators. The origins of these improvements are explored by exposing SWCNT FETs to a number of vapor phase polar molecules which produce similar effects on the FET characteristics as the PVDF-TrFE. Coating of the active SWCNT semiconductor layer with a fluoropolymer will be advantageous for the adoption of SWCNT FETs in a variety of printed electronics applications.</description><subject>Applied physics</subject><subject>Coating effects</subject><subject>Field effect transistors</subject><subject>Fluoropolymers</subject><subject>Oscillators</subject><subject>Reduction</subject><subject>Semiconductor devices</subject><subject>Single wall carbon nanotubes</subject><subject>Stability</subject><subject>Threshold voltage</subject><subject>Vapor phases</subject><subject>Vinylidene</subject><subject>Vinylidene fluoride</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNotkEFLAzEUhIMoWKsH_0HAk4etecludnOUYlUoeNGjhCSbyJZusibZQv-9kfb0GPhm3jAI3QNZAeHsCVZ1JxrCxQVaAGnbigF0l2hBCGEVFw1co5uUdkU2lLEF-t7s5xDDFPbH0UZsgsqD_0nYhYiHcYrhYHtsVNTBY698yLO2OEfl05ByYXp7GIzFyhdqiGYeMp5sLO5ReWNv0ZVT-2TvzneJvjYvn-u3avvx-r5-3laGUZZLR8EotE5r4sDqvuGUCgeMOcY5aW3ddb1yDLqGc147rpXoeC8o5861pNVsiR5OuaXw72xTlrswR19eSgqUN7UAKgr1eKJMDClF6-QUh1HFowQi_9eTIM_rsT9qsGIi</recordid><startdate>20140922</startdate><enddate>20140922</enddate><creator>Jang, Seonpil</creator><creator>Kim, Bongjun</creator><creator>Geier, Michael L.</creator><creator>Prabhumirashi, Pradyumna L.</creator><creator>Hersam, Mark C.</creator><creator>Dodabalapur, Ananth</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20140922</creationdate><title>Fluoropolymer coatings for improved carbon nanotube transistor device and circuit performance</title><author>Jang, Seonpil ; Kim, Bongjun ; Geier, Michael L. ; Prabhumirashi, Pradyumna L. ; Hersam, Mark C. ; Dodabalapur, Ananth</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c323t-3193217fbb0f1ebd56229f133f36607e488daf31856664f6ba986d9266ff707b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Applied physics</topic><topic>Coating effects</topic><topic>Field effect transistors</topic><topic>Fluoropolymers</topic><topic>Oscillators</topic><topic>Reduction</topic><topic>Semiconductor devices</topic><topic>Single wall carbon nanotubes</topic><topic>Stability</topic><topic>Threshold voltage</topic><topic>Vapor phases</topic><topic>Vinylidene</topic><topic>Vinylidene fluoride</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jang, Seonpil</creatorcontrib><creatorcontrib>Kim, Bongjun</creatorcontrib><creatorcontrib>Geier, Michael L.</creatorcontrib><creatorcontrib>Prabhumirashi, Pradyumna L.</creatorcontrib><creatorcontrib>Hersam, Mark C.</creatorcontrib><creatorcontrib>Dodabalapur, Ananth</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jang, Seonpil</au><au>Kim, Bongjun</au><au>Geier, Michael L.</au><au>Prabhumirashi, Pradyumna L.</au><au>Hersam, Mark C.</au><au>Dodabalapur, Ananth</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Fluoropolymer coatings for improved carbon nanotube transistor device and circuit performance</atitle><jtitle>Applied physics letters</jtitle><date>2014-09-22</date><risdate>2014</risdate><volume>105</volume><issue>12</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We report on the marked improvements in key device characteristics of single walled carbon nanotube (SWCNT) field-effect transistors (FETs) by coating the active semiconductor with a fluoropolymer layer such as poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE). The observed improvements include: (i) A reduction in off-current by about an order of magnitude, (ii) a significant reduction in the variation of threshold voltage, and (iii) a reduction in bias stress-related instability and hysteresis present in device characteristics. These favorable changes in device characteristics also enhance circuit performance and the oscillation amplitude, oscillation frequency, and increase the yield of printed complementary 5-stage ring oscillators. The origins of these improvements are explored by exposing SWCNT FETs to a number of vapor phase polar molecules which produce similar effects on the FET characteristics as the PVDF-TrFE. Coating of the active SWCNT semiconductor layer with a fluoropolymer will be advantageous for the adoption of SWCNT FETs in a variety of printed electronics applications.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4895069</doi></addata></record> |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Coating effects Field effect transistors Fluoropolymers Oscillators Reduction Semiconductor devices Single wall carbon nanotubes Stability Threshold voltage Vapor phases Vinylidene Vinylidene fluoride |
| title | Fluoropolymer coatings for improved carbon nanotube transistor device and circuit performance |
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