Intentional anisotropic strain relaxation in (112¯2) oriented Al1−xInxN one-dimensionally lattice matched to GaN

We report on (112¯2) oriented Al1−xInxN grown by low pressure metal organic vapor phase epitaxy on (112¯2) GaN templates on patterned r-plane sapphire. The indium incorporation efficiency as well as the growth rate of (112¯2) oriented layers are similar to c-plane oriented Al1−xInxN layers. Depositi...

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Veröffentlicht in:	Applied physics letters 2014-09, Vol.105 (12)
Hauptverfasser:	Buß, E. R., Rossow, U., Bremers, H., Meisch, T., Caliebe, M., Scholz, F., Hangleiter, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Anisotropy Applied physics Buffer layers Epitaxial growth Lattice matching Low pressure Metalorganic chemical vapor deposition Optical activity Parameters Quantum wells Roughening Sapphire Strain relaxation Threading dislocations Vapor phase epitaxy
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