Gate tuning of anomalous Hall effect in ferromagnetic metal SrRuO3

The electric field effect on ferromagnetism offers a new dimension in the recent advancement of spintronics. We report on the gate control of transport properties in thin films of oxide-based ferromagnetic metal, SrRuO3. An electric double layer transistor configuration was utilized with an ionic li...

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Veröffentlicht in:	Applied physics letters 2014-10, Vol.105 (16)
Hauptverfasser:	Shimizu, Sunao, Takahashi, Kei S., Kubota, Masashi, Kawasaki, Masashi, Tokura, Yoshinori, Iwasa, Yoshihiro
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Carrier density Charge transport Dielectric strength Electric double layer Electric fields Ferromagnetic materials Hall effect Ionic liquids Ions Spintronics Thin films
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