Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer
The degradation of ferroelectric (FE) properties of atomic layer deposited Hf0.5Zr0.5O2 films with increasing thickness was mitigated by inserting 1 nm-thick Al2O3 interlayer at middle position of the thickness of the FE film. The large Pr of 10 μC/cm2, which is 11 times larger than that of single l...
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| Veröffentlicht in: | Applied physics letters 2014-11, Vol.105 (19) |
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| container_title | Applied physics letters |
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| creator | Kim, Han Joon Park, Min Hyuk Kim, Yu Jin Lee, Young Hwan Jeon, Woojin Gwon, Taehong Moon, Taehwan Kim, Keum Do Hwang, Cheol Seong |
| description | The degradation of ferroelectric (FE) properties of atomic layer deposited Hf0.5Zr0.5O2 films with increasing thickness was mitigated by inserting 1 nm-thick Al2O3 interlayer at middle position of the thickness of the FE film. The large Pr of 10 μC/cm2, which is 11 times larger than that of single layer Hf0.5Zr0.5O2 film with equivalent thickness, was achieved from the films as thick as 40 nm. The Al2O3 interlayer could interrupt the continual growth of Hf0.5Zr0.5O2 films, and the resulting decrease of grain size prevented the formation of non-ferroelectric monoclinic phase. The Al2O3 interlayer also largely decreased the leakage current of the Hf0.5Zr0.5O2 films. |
| doi_str_mv | 10.1063/1.4902072 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2126516986</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2126516986</sourcerecordid><originalsourceid>FETCH-LOGICAL-c323t-45120c3c6cd619ff7f7e9544aaad6ea27dc250ea4000816b2f4a36c13a54ebf13</originalsourceid><addsrcrecordid>eNotkE9LAzEQxYMoWKsHv0HAk4etmfzb7rEUtUKhF714CWk6KSnbbJ1sD_XTu9Je3vAeP2aGx9gjiAkIq15gohshRS2v2AhEXVcKYHrNRkIIVdnGwC27K2U3WCOVGjH3Tj5lXtIvcszblBEp5S2PHfGIRB22GHpKgS-imJhvGmQleUztvvD1ifvMUy5Ifeoy7yKftXKlhqhHav0J6Z7dRN8WfLjMMft6e_2cL6rl6v1jPltWQUnVV9qAFEEFGzYWmhjrWGNjtPbebyx6WW-CNAK9Hh6fgl3LqL2yAZQ3GtcR1Jg9nfceqPs5YundrjtSHk46CdIasM3UDtTzmQrUlUIY3YHS3tPJgXD__Tlwl_7UH8GzYHY</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2126516986</pqid></control><display><type>article</type><title>Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Kim, Han Joon ; Park, Min Hyuk ; Kim, Yu Jin ; Lee, Young Hwan ; Jeon, Woojin ; Gwon, Taehong ; Moon, Taehwan ; Kim, Keum Do ; Hwang, Cheol Seong</creator><creatorcontrib>Kim, Han Joon ; Park, Min Hyuk ; Kim, Yu Jin ; Lee, Young Hwan ; Jeon, Woojin ; Gwon, Taehong ; Moon, Taehwan ; Kim, Keum Do ; Hwang, Cheol Seong</creatorcontrib><description>The degradation of ferroelectric (FE) properties of atomic layer deposited Hf0.5Zr0.5O2 films with increasing thickness was mitigated by inserting 1 nm-thick Al2O3 interlayer at middle position of the thickness of the FE film. The large Pr of 10 μC/cm2, which is 11 times larger than that of single layer Hf0.5Zr0.5O2 film with equivalent thickness, was achieved from the films as thick as 40 nm. The Al2O3 interlayer could interrupt the continual growth of Hf0.5Zr0.5O2 films, and the resulting decrease of grain size prevented the formation of non-ferroelectric monoclinic phase. The Al2O3 interlayer also largely decreased the leakage current of the Hf0.5Zr0.5O2 films.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4902072</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Aluminum oxide ; Applied physics ; Ferroelectric materials ; Ferroelectricity ; Grain size ; Interlayers ; Leakage current ; Thick films ; Thickness</subject><ispartof>Applied physics letters, 2014-11, Vol.105 (19)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c323t-45120c3c6cd619ff7f7e9544aaad6ea27dc250ea4000816b2f4a36c13a54ebf13</citedby><cites>FETCH-LOGICAL-c323t-45120c3c6cd619ff7f7e9544aaad6ea27dc250ea4000816b2f4a36c13a54ebf13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Kim, Han Joon</creatorcontrib><creatorcontrib>Park, Min Hyuk</creatorcontrib><creatorcontrib>Kim, Yu Jin</creatorcontrib><creatorcontrib>Lee, Young Hwan</creatorcontrib><creatorcontrib>Jeon, Woojin</creatorcontrib><creatorcontrib>Gwon, Taehong</creatorcontrib><creatorcontrib>Moon, Taehwan</creatorcontrib><creatorcontrib>Kim, Keum Do</creatorcontrib><creatorcontrib>Hwang, Cheol Seong</creatorcontrib><title>Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer</title><title>Applied physics letters</title><description>The degradation of ferroelectric (FE) properties of atomic layer deposited Hf0.5Zr0.5O2 films with increasing thickness was mitigated by inserting 1 nm-thick Al2O3 interlayer at middle position of the thickness of the FE film. The large Pr of 10 μC/cm2, which is 11 times larger than that of single layer Hf0.5Zr0.5O2 film with equivalent thickness, was achieved from the films as thick as 40 nm. The Al2O3 interlayer could interrupt the continual growth of Hf0.5Zr0.5O2 films, and the resulting decrease of grain size prevented the formation of non-ferroelectric monoclinic phase. The Al2O3 interlayer also largely decreased the leakage current of the Hf0.5Zr0.5O2 films.</description><subject>Aluminum oxide</subject><subject>Applied physics</subject><subject>Ferroelectric materials</subject><subject>Ferroelectricity</subject><subject>Grain size</subject><subject>Interlayers</subject><subject>Leakage current</subject><subject>Thick films</subject><subject>Thickness</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNotkE9LAzEQxYMoWKsHv0HAk4etmfzb7rEUtUKhF714CWk6KSnbbJ1sD_XTu9Je3vAeP2aGx9gjiAkIq15gohshRS2v2AhEXVcKYHrNRkIIVdnGwC27K2U3WCOVGjH3Tj5lXtIvcszblBEp5S2PHfGIRB22GHpKgS-imJhvGmQleUztvvD1ifvMUy5Ifeoy7yKftXKlhqhHav0J6Z7dRN8WfLjMMft6e_2cL6rl6v1jPltWQUnVV9qAFEEFGzYWmhjrWGNjtPbebyx6WW-CNAK9Hh6fgl3LqL2yAZQ3GtcR1Jg9nfceqPs5YundrjtSHk46CdIasM3UDtTzmQrUlUIY3YHS3tPJgXD__Tlwl_7UH8GzYHY</recordid><startdate>20141110</startdate><enddate>20141110</enddate><creator>Kim, Han Joon</creator><creator>Park, Min Hyuk</creator><creator>Kim, Yu Jin</creator><creator>Lee, Young Hwan</creator><creator>Jeon, Woojin</creator><creator>Gwon, Taehong</creator><creator>Moon, Taehwan</creator><creator>Kim, Keum Do</creator><creator>Hwang, Cheol Seong</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20141110</creationdate><title>Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer</title><author>Kim, Han Joon ; Park, Min Hyuk ; Kim, Yu Jin ; Lee, Young Hwan ; Jeon, Woojin ; Gwon, Taehong ; Moon, Taehwan ; Kim, Keum Do ; Hwang, Cheol Seong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c323t-45120c3c6cd619ff7f7e9544aaad6ea27dc250ea4000816b2f4a36c13a54ebf13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Aluminum oxide</topic><topic>Applied physics</topic><topic>Ferroelectric materials</topic><topic>Ferroelectricity</topic><topic>Grain size</topic><topic>Interlayers</topic><topic>Leakage current</topic><topic>Thick films</topic><topic>Thickness</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Han Joon</creatorcontrib><creatorcontrib>Park, Min Hyuk</creatorcontrib><creatorcontrib>Kim, Yu Jin</creatorcontrib><creatorcontrib>Lee, Young Hwan</creatorcontrib><creatorcontrib>Jeon, Woojin</creatorcontrib><creatorcontrib>Gwon, Taehong</creatorcontrib><creatorcontrib>Moon, Taehwan</creatorcontrib><creatorcontrib>Kim, Keum Do</creatorcontrib><creatorcontrib>Hwang, Cheol Seong</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Han Joon</au><au>Park, Min Hyuk</au><au>Kim, Yu Jin</au><au>Lee, Young Hwan</au><au>Jeon, Woojin</au><au>Gwon, Taehong</au><au>Moon, Taehwan</au><au>Kim, Keum Do</au><au>Hwang, Cheol Seong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer</atitle><jtitle>Applied physics letters</jtitle><date>2014-11-10</date><risdate>2014</risdate><volume>105</volume><issue>19</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>The degradation of ferroelectric (FE) properties of atomic layer deposited Hf0.5Zr0.5O2 films with increasing thickness was mitigated by inserting 1 nm-thick Al2O3 interlayer at middle position of the thickness of the FE film. The large Pr of 10 μC/cm2, which is 11 times larger than that of single layer Hf0.5Zr0.5O2 film with equivalent thickness, was achieved from the films as thick as 40 nm. The Al2O3 interlayer could interrupt the continual growth of Hf0.5Zr0.5O2 films, and the resulting decrease of grain size prevented the formation of non-ferroelectric monoclinic phase. The Al2O3 interlayer also largely decreased the leakage current of the Hf0.5Zr0.5O2 films.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4902072</doi></addata></record> |
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| subjects | Aluminum oxide Applied physics Ferroelectric materials Ferroelectricity Grain size Interlayers Leakage current Thick films Thickness |
| title | Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer |
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