High mobility 4H-SiC (0001) transistors using alkali and alkaline earth interface layers

Alkali (Rb and Cs) and alkaline earth (Ca, Sr, and Ba) elements have been investigated as interface passivation materials for metal-oxide-semiconductor field-effect transistors (MOSFETs) on 4H-SiC (0001). While the alkali elements Rb and Cs result in field-effect mobility (μFE) values > 25 cm2/V·...

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