Fabrication of poly(methyl methacrylate)-MoS2/graphene heterostructure for memory device application

Combination of two dimensional graphene and semi-conducting molybdenum disulfide (MoS2) is of great interest for various electronic device applications. Here, we demonstrate fabrication of a hybridized structure with the chemical vapor deposited graphene and MoS2 crystals to configure a memory devic...

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Veröffentlicht in:	Journal of applied physics 2014-12, Vol.116 (21)
Hauptverfasser:	Shinde, Sachin M., Kalita, Golap, Tanemura, Masaki
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Atomic structure Chemical vapor deposition Computer memory Crystal structure Data storage Electrode materials Graphene Heterostructures Memory devices Molybdenum Molybdenum disulfide Molybdenum oxides Molybdenum trioxide Organic chemistry Polymethyl methacrylate Sulfurization Synthesis Thin films
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