Multilevel characteristics and memory mechanisms for nonvolatile memory devices based on CuInS2 quantum dot-polymethylmethacrylate nanocomposites

Nonvolatile memory devices based on CuInS2 (CIS) quantum dots (QDs) embedded in a polymethylmethacrylate (PMMA) layer were fabricated using spin-coating method. The memory window widths of the capacitance-voltage (C-V) curves for the Al/CIS QDs embedded in PMMA layer/p-Si devices were 0.3, 0.6, and...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied physics letters 2014-12, Vol.105 (23)
Hauptverfasser:	Zhou, Yang, Yun, Dong Yeol, Kim, Sang Wook, Kim, Tae Whan
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum Applied physics Capacitance Memory devices Nanocomposites Polymethyl methacrylate Quantum dots Random access memory Silicon Spin coating
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!