Multilevel characteristics and memory mechanisms for nonvolatile memory devices based on CuInS2 quantum dot-polymethylmethacrylate nanocomposites
Nonvolatile memory devices based on CuInS2 (CIS) quantum dots (QDs) embedded in a polymethylmethacrylate (PMMA) layer were fabricated using spin-coating method. The memory window widths of the capacitance-voltage (C-V) curves for the Al/CIS QDs embedded in PMMA layer/p-Si devices were 0.3, 0.6, and...
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| Veröffentlicht in: | Applied physics letters 2014-12, Vol.105 (23) |
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| creator | Zhou, Yang Yun, Dong Yeol Kim, Sang Wook Kim, Tae Whan |
| description | Nonvolatile memory devices based on CuInS2 (CIS) quantum dots (QDs) embedded in a polymethylmethacrylate (PMMA) layer were fabricated using spin-coating method. The memory window widths of the capacitance-voltage (C-V) curves for the Al/CIS QDs embedded in PMMA layer/p-Si devices were 0.3, 0.6, and 1.0 V for sweep voltages of ±3, ±5, and ±7 V, respectively. Capacitance-cycle data demonstrated that the charge-trapping capability of the devices with an ON/OFF ratio value of 2.81 × 10−10 was maintained for 8 × 103 cycles without significant degradation and that the extrapolation of the ON/OFF ratio value to 1 × 106 cycles converged to 2.40 × 10−10, indicative of the good stability of the devices. The memory mechanisms for the devices are described on the basis of the C-V curves and the energy-band diagrams. |
| doi_str_mv | 10.1063/1.4903243 |
| format | Article |
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The memory window widths of the capacitance-voltage (C-V) curves for the Al/CIS QDs embedded in PMMA layer/p-Si devices were 0.3, 0.6, and 1.0 V for sweep voltages of ±3, ±5, and ±7 V, respectively. Capacitance-cycle data demonstrated that the charge-trapping capability of the devices with an ON/OFF ratio value of 2.81 × 10−10 was maintained for 8 × 103 cycles without significant degradation and that the extrapolation of the ON/OFF ratio value to 1 × 106 cycles converged to 2.40 × 10−10, indicative of the good stability of the devices. The memory mechanisms for the devices are described on the basis of the C-V curves and the energy-band diagrams.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4903243</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Aluminum ; Applied physics ; Capacitance ; Memory devices ; Nanocomposites ; Polymethyl methacrylate ; Quantum dots ; Random access memory ; Silicon ; Spin coating</subject><ispartof>Applied physics letters, 2014-12, Vol.105 (23)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c358t-79f668fb56afff2e4b5ce24525f18716ccc5e58541836a6ba94da75b37c295803</citedby><cites>FETCH-LOGICAL-c358t-79f668fb56afff2e4b5ce24525f18716ccc5e58541836a6ba94da75b37c295803</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Zhou, Yang</creatorcontrib><creatorcontrib>Yun, Dong Yeol</creatorcontrib><creatorcontrib>Kim, Sang Wook</creatorcontrib><creatorcontrib>Kim, Tae Whan</creatorcontrib><title>Multilevel characteristics and memory mechanisms for nonvolatile memory devices based on CuInS2 quantum dot-polymethylmethacrylate nanocomposites</title><title>Applied physics letters</title><description>Nonvolatile memory devices based on CuInS2 (CIS) quantum dots (QDs) embedded in a polymethylmethacrylate (PMMA) layer were fabricated using spin-coating method. The memory window widths of the capacitance-voltage (C-V) curves for the Al/CIS QDs embedded in PMMA layer/p-Si devices were 0.3, 0.6, and 1.0 V for sweep voltages of ±3, ±5, and ±7 V, respectively. Capacitance-cycle data demonstrated that the charge-trapping capability of the devices with an ON/OFF ratio value of 2.81 × 10−10 was maintained for 8 × 103 cycles without significant degradation and that the extrapolation of the ON/OFF ratio value to 1 × 106 cycles converged to 2.40 × 10−10, indicative of the good stability of the devices. The memory mechanisms for the devices are described on the basis of the C-V curves and the energy-band diagrams.</description><subject>Aluminum</subject><subject>Applied physics</subject><subject>Capacitance</subject><subject>Memory devices</subject><subject>Nanocomposites</subject><subject>Polymethyl methacrylate</subject><subject>Quantum dots</subject><subject>Random access memory</subject><subject>Silicon</subject><subject>Spin coating</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNo1kM1OwzAQhC0EEqVw4A0sceKQ4p_YSY6o4qdSEQfgHDnOWk2V2KntRMpj8MakarnsaLXfzkiD0D0lK0okf6KrtCCcpfwCLSjJsoRTml-iBSGEJ7IQ9BrdhLCfV8E4X6Dfj6GNTQsjtFjvlFc6gm9CbHTAyta4g875aZb5aJvQBWycx9bZ0bXq-PhP1DA2GgKuVIAaO4vXw8Z-MXwYlI1Dh2sXk961UwdxN7XHqbSfZg_AVlmnXde70EQIt-jKqDbA3VmX6Of15Xv9nmw_3zbr522iuchjkhVGytxUQipjDIO0EhpYKpgwNM-o1FoLELlIac6lkpUq0lplouKZZoXICV-ih5Nv791hgBDLvRu8nSNLRplMC85pNlOPJ0p7F4IHU_a-6ZSfSkrKY-MlLc-N8z_QoXbV</recordid><startdate>20141208</startdate><enddate>20141208</enddate><creator>Zhou, Yang</creator><creator>Yun, Dong Yeol</creator><creator>Kim, Sang Wook</creator><creator>Kim, Tae Whan</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20141208</creationdate><title>Multilevel characteristics and memory mechanisms for nonvolatile memory devices based on CuInS2 quantum dot-polymethylmethacrylate nanocomposites</title><author>Zhou, Yang ; Yun, Dong Yeol ; Kim, Sang Wook ; Kim, Tae Whan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c358t-79f668fb56afff2e4b5ce24525f18716ccc5e58541836a6ba94da75b37c295803</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Aluminum</topic><topic>Applied physics</topic><topic>Capacitance</topic><topic>Memory devices</topic><topic>Nanocomposites</topic><topic>Polymethyl methacrylate</topic><topic>Quantum dots</topic><topic>Random access memory</topic><topic>Silicon</topic><topic>Spin coating</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhou, Yang</creatorcontrib><creatorcontrib>Yun, Dong Yeol</creatorcontrib><creatorcontrib>Kim, Sang Wook</creatorcontrib><creatorcontrib>Kim, Tae Whan</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhou, Yang</au><au>Yun, Dong Yeol</au><au>Kim, Sang Wook</au><au>Kim, Tae Whan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Multilevel characteristics and memory mechanisms for nonvolatile memory devices based on CuInS2 quantum dot-polymethylmethacrylate nanocomposites</atitle><jtitle>Applied physics letters</jtitle><date>2014-12-08</date><risdate>2014</risdate><volume>105</volume><issue>23</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Nonvolatile memory devices based on CuInS2 (CIS) quantum dots (QDs) embedded in a polymethylmethacrylate (PMMA) layer were fabricated using spin-coating method. The memory window widths of the capacitance-voltage (C-V) curves for the Al/CIS QDs embedded in PMMA layer/p-Si devices were 0.3, 0.6, and 1.0 V for sweep voltages of ±3, ±5, and ±7 V, respectively. Capacitance-cycle data demonstrated that the charge-trapping capability of the devices with an ON/OFF ratio value of 2.81 × 10−10 was maintained for 8 × 103 cycles without significant degradation and that the extrapolation of the ON/OFF ratio value to 1 × 106 cycles converged to 2.40 × 10−10, indicative of the good stability of the devices. The memory mechanisms for the devices are described on the basis of the C-V curves and the energy-band diagrams.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4903243</doi><oa>free_for_read</oa></addata></record> |
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| source | American Institute of Physics; Alma/SFX Local Collection |
| subjects | Aluminum Applied physics Capacitance Memory devices Nanocomposites Polymethyl methacrylate Quantum dots Random access memory Silicon Spin coating |
| title | Multilevel characteristics and memory mechanisms for nonvolatile memory devices based on CuInS2 quantum dot-polymethylmethacrylate nanocomposites |
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