Deep-level transient spectroscopy of Al/a-Si:H/c-Si structures for heterojunction solar cell applications

A Deep-Level Transient Spectroscopy study is performed on Metal-Insulator-Semiconductor capacitors with a 70 nm amorphous silicon (a-Si:H) passivation layer, in order to study the electrically active defects present at the n- or p-type crystalline silicon (c-Si)/a-Si:H heterojunction. Trap filling k...

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Veröffentlicht in:	Journal of applied physics 2014-12, Vol.116 (23)
Hauptverfasser:	Simoen, E., Ferro, V., O'Sullivan, B. J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum Amorphous silicon Applied physics Correlation analysis Crystal defects D defects Deep level transient spectroscopy Electric potential Electrical measurement Heterojunctions Insulators Majority carriers MIS (semiconductors) Photovoltaic cells Pulse duration Silicon substrates Solar cells Spectrum analysis
Online-Zugang:	Volltext
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