Deep-level transient spectroscopy of Al/a-Si:H/c-Si structures for heterojunction solar cell applications
A Deep-Level Transient Spectroscopy study is performed on Metal-Insulator-Semiconductor capacitors with a 70 nm amorphous silicon (a-Si:H) passivation layer, in order to study the electrically active defects present at the n- or p-type crystalline silicon (c-Si)/a-Si:H heterojunction. Trap filling k...
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Veröffentlicht in: | Journal of applied physics 2014-12, Vol.116 (23) |
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description | A Deep-Level Transient Spectroscopy study is performed on Metal-Insulator-Semiconductor capacitors with a 70 nm amorphous silicon (a-Si:H) passivation layer, in order to study the electrically active defects present at the n- or p-type crystalline silicon (c-Si)/a-Si:H heterojunction. Trap filling kinetics identify two types of traps, namely, Pb0 dangling bond centers at the Si(100) interface and similar D centers in the a-Si:H, which are in close proximity to the interface and giving rise to a dominant peak around silicon midgap. The distinction between both kinds of deep levels is based on the carrier capture behavior, which is more point-defect-like for the Pb0 centers and varies according to the logarithm of the voltage pulse duration for the D defects, indicating capture of majority carriers from the substrate by tunneling into a-Si:H, the densities of which are correlated with capacitance-voltage measurements. This directly demonstrates that the recombination properties of the c-Si/a-Si:H interface are both determined by Pb0 and D defect states. |
doi_str_mv | 10.1063/1.4904082 |
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J.</creator><creatorcontrib>Simoen, E. ; Ferro, V. ; O'Sullivan, B. J.</creatorcontrib><description>A Deep-Level Transient Spectroscopy study is performed on Metal-Insulator-Semiconductor capacitors with a 70 nm amorphous silicon (a-Si:H) passivation layer, in order to study the electrically active defects present at the n- or p-type crystalline silicon (c-Si)/a-Si:H heterojunction. Trap filling kinetics identify two types of traps, namely, Pb0 dangling bond centers at the Si(100) interface and similar D centers in the a-Si:H, which are in close proximity to the interface and giving rise to a dominant peak around silicon midgap. The distinction between both kinds of deep levels is based on the carrier capture behavior, which is more point-defect-like for the Pb0 centers and varies according to the logarithm of the voltage pulse duration for the D defects, indicating capture of majority carriers from the substrate by tunneling into a-Si:H, the densities of which are correlated with capacitance-voltage measurements. This directly demonstrates that the recombination properties of the c-Si/a-Si:H interface are both determined by Pb0 and D defect states.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4904082</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Aluminum ; Amorphous silicon ; Applied physics ; Correlation analysis ; Crystal defects ; D defects ; Deep level transient spectroscopy ; Electric potential ; Electrical measurement ; Heterojunctions ; Insulators ; Majority carriers ; MIS (semiconductors) ; Photovoltaic cells ; Pulse duration ; Silicon substrates ; Solar cells ; Spectrum analysis</subject><ispartof>Journal of applied physics, 2014-12, Vol.116 (23)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c292t-ed312c1a4fdf1bae78f2de0506c7ca2a91e0fac8638119e222affadcbf7c9e803</citedby><cites>FETCH-LOGICAL-c292t-ed312c1a4fdf1bae78f2de0506c7ca2a91e0fac8638119e222affadcbf7c9e803</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Simoen, E.</creatorcontrib><creatorcontrib>Ferro, V.</creatorcontrib><creatorcontrib>O'Sullivan, B. J.</creatorcontrib><title>Deep-level transient spectroscopy of Al/a-Si:H/c-Si structures for heterojunction solar cell applications</title><title>Journal of applied physics</title><description>A Deep-Level Transient Spectroscopy study is performed on Metal-Insulator-Semiconductor capacitors with a 70 nm amorphous silicon (a-Si:H) passivation layer, in order to study the electrically active defects present at the n- or p-type crystalline silicon (c-Si)/a-Si:H heterojunction. Trap filling kinetics identify two types of traps, namely, Pb0 dangling bond centers at the Si(100) interface and similar D centers in the a-Si:H, which are in close proximity to the interface and giving rise to a dominant peak around silicon midgap. The distinction between both kinds of deep levels is based on the carrier capture behavior, which is more point-defect-like for the Pb0 centers and varies according to the logarithm of the voltage pulse duration for the D defects, indicating capture of majority carriers from the substrate by tunneling into a-Si:H, the densities of which are correlated with capacitance-voltage measurements. This directly demonstrates that the recombination properties of the c-Si/a-Si:H interface are both determined by Pb0 and D defect states.</description><subject>Aluminum</subject><subject>Amorphous silicon</subject><subject>Applied physics</subject><subject>Correlation analysis</subject><subject>Crystal defects</subject><subject>D defects</subject><subject>Deep level transient spectroscopy</subject><subject>Electric potential</subject><subject>Electrical measurement</subject><subject>Heterojunctions</subject><subject>Insulators</subject><subject>Majority carriers</subject><subject>MIS (semiconductors)</subject><subject>Photovoltaic cells</subject><subject>Pulse duration</subject><subject>Silicon substrates</subject><subject>Solar cells</subject><subject>Spectrum analysis</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNotkEFLAzEUhIMoWKsH_0HAk4dt38tudxNvpVYrFDyo5yXNvuCWuFmTrNB_75b2NDB8zDDD2D3CDKHM5zgrFBQgxQWbIEiVVYsFXLIJgMBMqkpds5sY9wCIMlcT1j4T9ZmjP3I8Bd3FlrrEY08mBR-N7w_cW750c519tE-buRmFxxQGk4ZAkVsf-DclCn4_dCa1vuPROx24Iee47nvXGn204y27stpFujvrlH29rD9Xm2z7_vq2Wm4zI5RIGTU5CoO6sI3FnaZKWtEQLKA0ldFCKySw2sgyl4iKhBDaWt2Yna2MIgn5lD2ccvvgfweKqd77IXRjZS1QlIXKUZUj9XiizDgzBrJ1H9ofHQ41Qn18ssb6_GT-D8apZ5c</recordid><startdate>20141221</startdate><enddate>20141221</enddate><creator>Simoen, E.</creator><creator>Ferro, V.</creator><creator>O'Sullivan, B. J.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20141221</creationdate><title>Deep-level transient spectroscopy of Al/a-Si:H/c-Si structures for heterojunction solar cell applications</title><author>Simoen, E. ; Ferro, V. ; O'Sullivan, B. 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J.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Simoen, E.</au><au>Ferro, V.</au><au>O'Sullivan, B. J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Deep-level transient spectroscopy of Al/a-Si:H/c-Si structures for heterojunction solar cell applications</atitle><jtitle>Journal of applied physics</jtitle><date>2014-12-21</date><risdate>2014</risdate><volume>116</volume><issue>23</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>A Deep-Level Transient Spectroscopy study is performed on Metal-Insulator-Semiconductor capacitors with a 70 nm amorphous silicon (a-Si:H) passivation layer, in order to study the electrically active defects present at the n- or p-type crystalline silicon (c-Si)/a-Si:H heterojunction. Trap filling kinetics identify two types of traps, namely, Pb0 dangling bond centers at the Si(100) interface and similar D centers in the a-Si:H, which are in close proximity to the interface and giving rise to a dominant peak around silicon midgap. The distinction between both kinds of deep levels is based on the carrier capture behavior, which is more point-defect-like for the Pb0 centers and varies according to the logarithm of the voltage pulse duration for the D defects, indicating capture of majority carriers from the substrate by tunneling into a-Si:H, the densities of which are correlated with capacitance-voltage measurements. This directly demonstrates that the recombination properties of the c-Si/a-Si:H interface are both determined by Pb0 and D defect states.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4904082</doi><oa>free_for_read</oa></addata></record> |
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subjects | Aluminum Amorphous silicon Applied physics Correlation analysis Crystal defects D defects Deep level transient spectroscopy Electric potential Electrical measurement Heterojunctions Insulators Majority carriers MIS (semiconductors) Photovoltaic cells Pulse duration Silicon substrates Solar cells Spectrum analysis |
title | Deep-level transient spectroscopy of Al/a-Si:H/c-Si structures for heterojunction solar cell applications |
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