High-Mobility Normally OFF Al2O3/AlGaN/GaN MISFET With Damage-Free Recessed-Gate Structure

In this letter, partial recessed-gate AlAl 2 O 3 /AlGaN/GaN MISFET is experimentally demonstrated based on selective-area growth. The device features different contents of Al in the AlGaN barriers that were grown in the recessed and accessed regions that contributed to a higher \text{V}_{\textsf {t...

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Veröffentlicht in:	IEEE electron device letters 2018-11, Vol.39 (11), p.1720-1723
Hauptverfasser:	Zhang, Jialin, He, Liang, Li, Liuan, Ni, Yiqiang, Que, Taotao, Liu, Zhenxin, Wang, Wenjing, Zheng, Jiexin, Huang, Yanfen, Chen, Jia, Gu, Xin, Zhao, Yawen, He, Lei, Wu, Zhisheng, Liu, Yang
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitride Aluminum gallium nitrides Aluminum oxide Current leakage field-effect mobility Gallium nitride GaN MISFET Gates HEMTs Logic gates MISFETs MODFETs partial recessed-gate Structural damage Thin barrier layer threshold voltage Wide band gap semiconductors
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