InAs-based interband-cascade-lasers emitting around 7 μ m with threshold current densities below 1 kA/cm2 at room temperature
Interband cascade lasers (ICLs) grown on InAs substrates with threshold current densities below 1 kA/cm2 are presented. Two cascade designs with different lengths of the electron injector were investigated. Using a cascade design with 3 InAs quantum wells (QWs) in the electron injector, a device inc...
Gespeichert in:
Veröffentlicht in: | Applied physics letters 2015-01, Vol.106 (4) |
---|---|
Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Schreiben Sie den ersten Kommentar!