InAs-based interband-cascade-lasers emitting around 7  μ m with threshold current densities below 1 kA/cm2 at room temperature

Interband cascade lasers (ICLs) grown on InAs substrates with threshold current densities below 1 kA/cm2 are presented. Two cascade designs with different lengths of the electron injector were investigated. Using a cascade design with 3 InAs quantum wells (QWs) in the electron injector, a device inc...

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Veröffentlicht in:Applied physics letters 2015-01, Vol.106 (4)
Hauptverfasser: Dallner, Matthias, Hau, Florian, Höfling, Sven, Kamp, Martin
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Sprache:eng
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