Growth and characterization of sidewall graphene nanoribbons

We study the growth of epitaxial graphene nanoribbons on silicon carbide mesa sidewalls by means of scanning probe techniques, local transport, and Raman spectroscopy. The sidewall nanoribbons are demonstrated to consist of charge neutral monolayer graphene with a zig-zag type orientation. Two types...

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Veröffentlicht in:	Applied physics letters 2015-01, Vol.106 (4)
Hauptverfasser:	Baringhaus, J., Aprojanz, J., Wiegand, J., Laube, D., Halbauer, M., Hübner, J., Oestreich, M., Tegenkamp, C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Epitaxial growth Graphene Nanoribbons Raman spectroscopy Roughness Silicon carbide Substrates Transport properties
Online-Zugang:	Volltext
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