Growth and characterization of sidewall graphene nanoribbons
We study the growth of epitaxial graphene nanoribbons on silicon carbide mesa sidewalls by means of scanning probe techniques, local transport, and Raman spectroscopy. The sidewall nanoribbons are demonstrated to consist of charge neutral monolayer graphene with a zig-zag type orientation. Two types...
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| Veröffentlicht in: | Applied physics letters 2015-01, Vol.106 (4) |
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| container_title | Applied physics letters |
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| creator | Baringhaus, J. Aprojanz, J. Wiegand, J. Laube, D. Halbauer, M. Hübner, J. Oestreich, M. Tegenkamp, C. |
| description | We study the growth of epitaxial graphene nanoribbons on silicon carbide mesa sidewalls by means of scanning probe techniques, local transport, and Raman spectroscopy. The sidewall nanoribbons are demonstrated to consist of charge neutral monolayer graphene with a zig-zag type orientation. Two types of roughness, the step density of the substrate and the roughness of the sidewalls, were identified as being detrimental to the transport properties of these ribbons. By means of 4-point probe experiments, single channel ballistic transport was observed with a mean free path limited by the width of the underlying substrate terraces. Moreover, a transition from ballistic to one-dimensional diffusive transport can be obviously triggered by an increased roughness of the sidewall, e.g., by an enlarged depth of the mesa. |
| doi_str_mv | 10.1063/1.4907041 |
| format | Article |
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The sidewall nanoribbons are demonstrated to consist of charge neutral monolayer graphene with a zig-zag type orientation. Two types of roughness, the step density of the substrate and the roughness of the sidewalls, were identified as being detrimental to the transport properties of these ribbons. By means of 4-point probe experiments, single channel ballistic transport was observed with a mean free path limited by the width of the underlying substrate terraces. Moreover, a transition from ballistic to one-dimensional diffusive transport can be obviously triggered by an increased roughness of the sidewall, e.g., by an enlarged depth of the mesa.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4907041</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Epitaxial growth ; Graphene ; Nanoribbons ; Raman spectroscopy ; Roughness ; Silicon carbide ; Substrates ; Transport properties</subject><ispartof>Applied physics letters, 2015-01, Vol.106 (4)</ispartof><rights>2015 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c257t-8829e4eadfe229dbe33c3fcad8a3d518dcd30a2f549713d9d10e1e975703b8433</citedby><cites>FETCH-LOGICAL-c257t-8829e4eadfe229dbe33c3fcad8a3d518dcd30a2f549713d9d10e1e975703b8433</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids></links><search><creatorcontrib>Baringhaus, J.</creatorcontrib><creatorcontrib>Aprojanz, J.</creatorcontrib><creatorcontrib>Wiegand, J.</creatorcontrib><creatorcontrib>Laube, D.</creatorcontrib><creatorcontrib>Halbauer, M.</creatorcontrib><creatorcontrib>Hübner, J.</creatorcontrib><creatorcontrib>Oestreich, M.</creatorcontrib><creatorcontrib>Tegenkamp, C.</creatorcontrib><title>Growth and characterization of sidewall graphene nanoribbons</title><title>Applied physics letters</title><description>We study the growth of epitaxial graphene nanoribbons on silicon carbide mesa sidewalls by means of scanning probe techniques, local transport, and Raman spectroscopy. The sidewall nanoribbons are demonstrated to consist of charge neutral monolayer graphene with a zig-zag type orientation. Two types of roughness, the step density of the substrate and the roughness of the sidewalls, were identified as being detrimental to the transport properties of these ribbons. By means of 4-point probe experiments, single channel ballistic transport was observed with a mean free path limited by the width of the underlying substrate terraces. Moreover, a transition from ballistic to one-dimensional diffusive transport can be obviously triggered by an increased roughness of the sidewall, e.g., by an enlarged depth of the mesa.</description><subject>Applied physics</subject><subject>Epitaxial growth</subject><subject>Graphene</subject><subject>Nanoribbons</subject><subject>Raman spectroscopy</subject><subject>Roughness</subject><subject>Silicon carbide</subject><subject>Substrates</subject><subject>Transport properties</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNotkMFKAzEURYMoWKsL_2DAlYupeXkzTQJupNgqFNzoOrxJMs6UmtRkStGvd6RdXS4c7oXD2C3wGfA5PsCs0lzyCs7YBLiUJQKoczbhnGM51zVcsqucN2OtBeKEPa5SPAxdQcEVtqNEdvCp_6Whj6GIbZF75w-03RafiXadD74IFGLqmyaGfM0uWtpmf3PKKftYPr8vXsr12-p18bQurajlUColtK88udYLoV3jES22lpwidDUoZx1yEm1daQnotAPuwWtZS46NqhCn7O64u0vxe-_zYDZxn8J4aQSISiOCEiN1f6Rsijkn35pd6r8o_Rjg5l-OAXOSg38spVX-</recordid><startdate>20150126</startdate><enddate>20150126</enddate><creator>Baringhaus, J.</creator><creator>Aprojanz, J.</creator><creator>Wiegand, J.</creator><creator>Laube, D.</creator><creator>Halbauer, M.</creator><creator>Hübner, J.</creator><creator>Oestreich, M.</creator><creator>Tegenkamp, C.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20150126</creationdate><title>Growth and characterization of sidewall graphene nanoribbons</title><author>Baringhaus, J. ; Aprojanz, J. ; Wiegand, J. ; Laube, D. ; Halbauer, M. ; Hübner, J. ; Oestreich, M. ; Tegenkamp, C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c257t-8829e4eadfe229dbe33c3fcad8a3d518dcd30a2f549713d9d10e1e975703b8433</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Applied physics</topic><topic>Epitaxial growth</topic><topic>Graphene</topic><topic>Nanoribbons</topic><topic>Raman spectroscopy</topic><topic>Roughness</topic><topic>Silicon carbide</topic><topic>Substrates</topic><topic>Transport properties</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Baringhaus, J.</creatorcontrib><creatorcontrib>Aprojanz, J.</creatorcontrib><creatorcontrib>Wiegand, J.</creatorcontrib><creatorcontrib>Laube, D.</creatorcontrib><creatorcontrib>Halbauer, M.</creatorcontrib><creatorcontrib>Hübner, J.</creatorcontrib><creatorcontrib>Oestreich, M.</creatorcontrib><creatorcontrib>Tegenkamp, C.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Baringhaus, J.</au><au>Aprojanz, J.</au><au>Wiegand, J.</au><au>Laube, D.</au><au>Halbauer, M.</au><au>Hübner, J.</au><au>Oestreich, M.</au><au>Tegenkamp, C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth and characterization of sidewall graphene nanoribbons</atitle><jtitle>Applied physics letters</jtitle><date>2015-01-26</date><risdate>2015</risdate><volume>106</volume><issue>4</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We study the growth of epitaxial graphene nanoribbons on silicon carbide mesa sidewalls by means of scanning probe techniques, local transport, and Raman spectroscopy. The sidewall nanoribbons are demonstrated to consist of charge neutral monolayer graphene with a zig-zag type orientation. Two types of roughness, the step density of the substrate and the roughness of the sidewalls, were identified as being detrimental to the transport properties of these ribbons. By means of 4-point probe experiments, single channel ballistic transport was observed with a mean free path limited by the width of the underlying substrate terraces. Moreover, a transition from ballistic to one-dimensional diffusive transport can be obviously triggered by an increased roughness of the sidewall, e.g., by an enlarged depth of the mesa.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4907041</doi></addata></record> |
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| language | eng |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Epitaxial growth Graphene Nanoribbons Raman spectroscopy Roughness Silicon carbide Substrates Transport properties |
| title | Growth and characterization of sidewall graphene nanoribbons |
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